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PDF FFD-100 Data sheet ( Hoja de datos )
| Número de pieza | FFD-100 | |
| Descripción | si Pins Large Area | |
| Fabricantes | Perkin Elmer Optoelectronics | |
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Advanced sensor technologies
for today’s breakthrough applications
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Table of Contents
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.
1 page  
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Single-Photon Counting
Module—SPCM
SPCM-AQ4C Single-Photon
Counting Array
Table of Contents
Photon Counting Modules
SPCM-AQR-1X Series
Technical Specification
Parameter
Supply current
Power cable total resistance
Active area (diameter) @ min. Pd
Photon detection efficiency (Pd) @
400 nm
650 nm
830 nm
1060 nm
Pd variation at constant case
temperature (2 h @ 25° C)
Dark count (cps) =
SPCM-AQR-12
SPCM-AQR-13
SPCM-AQR-14
Average dark count variation
at constant case temperature
(6 hrs @ 25°C)
SPCM-AQR-12/13
SPCM-AQR-14/15/16
Single-photon timing
resolution
Output count rate before saturation
Linearity correction factor
@200 kc/s
@1 Mc/s
@5 Mc/s
Settling time following power
up (1% stability) @ 1 meg
counts/sec and 25°C
Gate threshold voltage:
(@ Vsupply = 5 V)
Low level (sink current >90 mA)
Test Conditions: T=22˚C
Typical
0.5 Amps
0.2 Ω
175 µm
5%
70%
50%
2%
±1-±3%
250-500
150-250
50-100
±10% max.
±1σ max.
350 ps @ FWHM
15 Mc/s
1.01
1.08
1.4
15 S
0 V-0.4 V
Parameter
Supply voltage
Case operating temperature
Quantum efficiency
400 nm
650 nm
830 nm
1060 nm
Pd variation 5° C to 40° C case
temperature
Dark count (cps) =
SPCM-AQR-15
SPCM-AQR-16
Average dark count variation
at 5°C to 40°C case
temperature
SPCM-AQR-12/13
SPCM-AQR-14/15/16
Dead time (Count rates
below 5 Mc/s)
Afterpulsing probability
Gating turn on/off
(50 Ω output)
Disable = TTL Low
Enable = TTL High
Threshold setting required on
counter for digital output
pulse (terminate in 50 Ω)
Gate threshold voltage:
(@ Vsupply = 5 V)
High level (sink current >30 mA)
Typical
5V
5-40°C
2%
90%
92%
18%
±4-±10%
50 max.
25 max.
±20% max.
±2σ max.
50 ns
0.3%
2 ns
45 ns
1V
3.5-5.25 V
SPCM-AQ4C
Technical Specification
Parameter
Supply currents:
@+2 V
@+5 V
@+30 V
Supply voltage
Typical
1 Amp
0.25 Amps
0.01 Amps
Operating temperature (heatsink)
Average dark count variation per
channel @ constant heatsink temp.
Single-photon counting resolution
Output pulse width
Continuous
Gate threshold voltage:
(@ Vsupply = 5 V)
Low level (sink current >90 mA)
Test Conditions: T=22˚C
1.95 V-2.05 V
4.75 V-5.25 V
29 V-31 V
5˚C-40˚C
10%
350 ps @ FWHM
30 ns
1 Mc/s
0 V-0.4 V
Parameter
Maximum power consumption:
@+2 V
@+5 V
@+30 V
Photon detection efficiency
(per channel)
@400 nm
@650 nm
@830 nm
Dark count (per channel)
Average dark count variation per
channel @ 5˚ to 40˚C heatsink temp.
Dead time
Maximum count rate
Afterpulsing probability
Gate threshold voltage:
(@ Vsupply = 5 V)
High level (source current >30 mA)
Typical
Counts/Second
6 Watts max.
5 Watts max.
1.2 Watts max.
5%
65%
25%
1000 counts/sec.
20%
50 ns-60 ns
1 Mc/s-2 Mc/s
0.3%
3.5 V-5.25 V
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Table of Contents
Photodiodes
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Indium Gallium Arsenide
PIN Photodiodes, Large-Area,
and Small-Area
Indium Gallium Arsenide APDs
• High Responsivity
• Low Capacitance for High
Bandwidths
• Available in Various Hermetic
Packages
InGaAs APDs—900 nm to 1700 nm
Technical Specification
Part
Number
C30644E
C30644ECER
C30645E
C30645ECER
C30662E
C30662ECER
C30733ECER
Photo Sens.
Resp.
Dark Spect. Noise Cap. Bandwidth NEP @ VOP
Standard Diam.
A/W Curr. Curr. Dens. @100 kHz GHz 1550 nm for
Package
µm @1300 nm @1550 nm Id (nA) In (pA/√Hz) Cd (pF) into 50 W pW/√Hz Gain=10 V
TO window 50 8.4 9.4 6 0.15
1
2 0.03 40-90
Ceramic
50
8.4
9.4 6
0.15
0.8
2 0.03 40-90
TO window 80
8.4
9.4 10
0.25
1.2
1 0.13 40-90
Ceramic
80
8.4
9.4 10
0.25
1
1 0.13 40-90
TO window 200
8.4
9.4 200
1.4
2.5 0.2 0.15 40-90
Ceramic 200
8.4
9.4 200
1.4
2.5 0.2 0.15 40-90
Ceramic
30
8.4
9.4 5
<0.1 0.25
3
0.01 40-90
Test conditions: T = 22ºC
InGaAs PIN Large-Area—900 nm to 1700 nm
Technical Specification
Photo Sens.
Resp.
Dark NEP @ Cap. Bandwidth Max. Power Bias Volt
Part Standard Diam.
A/W
Curr. 1300 nm @100 kHz MHz
for .15 dB for these
Number Package mm @850 nm @1300 nm @1550 nm Id (nA) pW/√Hz Cd (pF) into 50 W Linearity (dBm) Specs V
C30619G TO-18 0.5
0.2 0.86 0.95 5 <0.1
8
350
>+13
5
C30641G TO-18 1
0.2 0.86 0.95 5 <0.1 40
75
>+13
2
C30642G TO-5
2
0.2 0.86 0.95 10 0.1
350
20
+11
0
C30665G TO-5
3
0.2 0.86 0.95 25 0.2 1000
3
+11 0
C30723G TO-8
5
0.2 0.86 0.95 30 0.3 2500
2.5
+11
0
Test conditions: T = 22ºC
InGaAs PIN Small-Area—900 nm to 1700 nm
Technical Specification
Part
Number
Photo Sens.
Resp.
Dark Spect. Noise Cap. Bandwidth NEP @ Bias Volt
Standard Diam.
A/W Curr. Curr. Dens. @100 kHz GHz 1550 nm for these
Package
µm @1300 nm @1550 nm Id (nA) In (pA/√Hz) Cd (pF) into 50 W pW/√Hz Specs V
C30616ECER Ceramic 50
0.86 0.95 0.5 <0.02
0.35 >3.5 <0.02 5
C30637ECER
Ceramic 75
0.86 0.95 0.8 <0.02
0.4
3.5 <0.02 5
C30617ECER Ceramic 100 0.86 0.95 1 <0.02 0.55 3.5 <0.02 5
C30617B
Ball lens 100 0.8 0.9 1 <0.02
0.8
3.5 <0.02 5
C30618ECER Ceramic 350 0.86 0.95 2
0.02
4 0.8 0.02 5
C30618G TO window 350 0.86 0.95 2
0.02
4 0.8 0.02 5
Test conditions: T = 22ºC
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| Páginas | Total 50 Páginas | |
| PDF Descargar | [ Datasheet FFD-100.PDF ] | |
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