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PDF IRHM7Z60 Data sheet ( Hoja de datos )

Número de pieza IRHM7Z60
Descripción RADIATION HARDENED POWER MOSFET THRU-HOLE
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 91701B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7Z60
30V, N-CHANNEL
RAD-HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHM7Z60
IRHM3Z60
IRHM4Z60
IRHM8Z60
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
0.01435*A
0.01435*A
0.01435*A
0.01435*A
TO-254AA
International Rectifier’s RAD-Hard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
35*
35* A
140
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
±20
500
35
25
0.35
-55 to 150
V
mJ
A
mJ
V/ns
oC
Lead Temperature
Weight
300 ( 0.063 in. (1.6mm) from case for 10s)
9.3 (Typical )
g
For footnotes refer to the last page
*Current is limited by internal wire diameter
www.irf.com
1
12/20/01

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IRHM7Z60 pdf
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Pre-Irradiation
IRHM7Z60
15000
12000
9000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Coss
Crss = Cgd
Coss = Cds + Cgd
Ciss
6000
Crss
3000
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 35 A
16
12
VDS = 24V
VDS = 15V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 100 200 300 400
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
10
TJ = 25 ° C
TJ = 150° C
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
1ms
1
0.1
0.0
VGS = 0 V
1.0 2.0 3.0 4.0 5.0 6.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
TC = 25°C
TJ = 150° C
Single Pulse
10
1
10
10ms
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
5

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