PDF IRHM7360 Data sheet ( Hoja de datos )

Número de pieza	IRHM7360
Descripción	(IRHM7360 / IRHM8360) REPETITIVE AVALANCHE AND dv/dt RATED
Fabricantes	International Rectifier
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No Preview Available ! www.datasheet4u.com PD - 90823A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHM7360 IRHM8360 N CHANNEL MEGA RAD HARD 400Volt, 0.22Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, In- ternational Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviv- ing transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paral- leling and temperature stability of the electrical pa- rameters. They are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Absolute Maximum Ratings Product Summary Part Number BVDSS IRHM7360 400V IRHM8360 400V RDS(on) 0.22Ω 0.22Ω ID 22A 22A Features: n Radiation Hardened up to 1 x 106 Rads (Si) n Single Event Burnout (SEB) Hardened n Single Event Gate Rupture (SEGR) Hardened n Gamma Dot (Flash X-Ray) Hardened n Neutron Tolerant n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Rating n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Ceramic Eyelets Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter IRHM7230, IRHM8230 Units Continuous Drain Current Continuous Drain Current 22 14 A Pulsed Drain Current 88 Max. Power Dissipation 250 W Linear Derating Factor 2.0 W/°C Gate-to-Source Voltage ±20 V Single Pulse Avalanche Energy 500 mJ Avalanche Current 22 A Repetitive Avalanche Energy 25 mJ Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range 4.0 -55 to 150 V/ns oC Lead Temperature Weight 300 (0.063 in. (1.6mm) from case for 10s) 9.3 (typical) g www.irf.com 1 10/28/98 1 page wwPwo.dsatta-sIrhreaetd4uia.ctoimon IRHM7360, IRHM8360 Devices Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals of Rad Hard HEXFET During 80% of BVDSS During Radiation 1x1012 Rad (Si)/Sec Exposure Fig 9. High Dose Rate (Gamma Dot) Test Circuit www.irf.com 5 5 Page wwPwr.dea-tIarsrhaedeti4aut.cioomn IRHM7360, IRHM8360 Devices 15V VDS L D R IV E R RG 1220VV tp D .U .T IA S 0.01Ω + - VDD A Fig 29a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 29c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 29b. Unclamped Inductive Waveforms 12 V QGS VG QG QGD Charge Fig30a. Basic Gate Charge Waveform www.irf.com Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF + D.U.T. -VDS VGS 3mA IG ID Current Sampling Resistors Fig 30b. Gate Charge Test Circuit 11 11 Page

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