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PDF IRHM4260 Data sheet ( Hoja de datos )
| Número de pieza | IRHM4260 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 91332D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
IRHM7260
JANSR2N7433
200V, N-CHANNEL
REF: MIL-PRF-19500/663
RAD Hard HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM7260 100K Rads (Si)
IRHM3260 300K Rads (Si)
IRHM4260 600K Rads (Si)
IRHM8260 1000K Rads (Si)
R DS(on) ID QPL Part Number
0.070Ω 35*A JANSR2N7433
0.070Ω 35*A JANSF2N7433
0.070Ω 35*A JANSG2N7433
0.070Ω 35*A JANSH2N7433
International Rectifiers RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-254AA
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
35*
25 A
161
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ➁
500
Avalanche Current ➀
35
Repetitive Avalanche Energy ➀
25
Peak Diode Recovery dv/dt ➂
5.7
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
9.3 (Typical )
V
mJ
A
mJ
V/ns
oC
g
*Current limited by pin diameter
For footnotes refer to the last page
www.irf.com
1
8/14/01
1 page  
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IRHM7260
10000
8000
6000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
Coss
2000
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 35A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160 200 240
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5 3.0
VSD ,Source-to-Drain Voltage (V)
3.5
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100us
10 1ms
10ms
TC
TJ
=
=
25 ° C
150 ° C
Single Pulse
1
1 10
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHM4260.PDF ] | |
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