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PDF IRHM8250 Data sheet ( Hoja de datos )

Número de pieza IRHM8250
Descripción RADIATION HARDENED POWER MOSFET THRU-HOLE
Fabricantes International Rectifier 
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PD - 90674C
RADIATION HARDENED
IRHM7250
JANSR2N7269
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (TO-254AA)
REF: MIL-PRF-19500/603
RAD HardHEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHM7250 100K Rads (Si) 0.1026A JANSR2N7269
IRHM3250 300K Rads (Si) 0.1026A JANSF2N7269
IRHM4250 600K Rads (Si) 0.1026A JANSG2N7269
IRHM8250 1000K Rads (Si) 0.1026A JANSH2N7269
TO-254AA
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Units
Continuous Drain Current
Continuous Drain Current
26
16 A
Pulsed Drain Current Œ
104
Max. Power Dissipation
150 W
Linear Derating Factor
1.2 W/°C
Gate-to-Source Voltage
±20 V
Single Pulse Avalanche Energy 
500
mJ
Avalanche Current Œ
26 A
Repetitive Avalanche Energy Œ
15 mJ
Peak Diode Recovery dv/dt Ž
Operating Junction
Storage Temperature Range
5.0
-55 to 150
V/ns
oC
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
10/11/00

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IRHM8250 pdf
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Pores-tI-rIrraraddiaiatitoionn
IRHM7250, JANSR2N7269
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals
of Rad Hard HEXFET During 80% of BVDSS During Radiation
1x1012 Rad (Si)/Sec Exposure
www.irf.com
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5

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IRHM8250 arduino
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Pre-Irradiation
IRHM7250, JANSR2N7269
15V
VDS
L
D R IV E R
RG
12 02VV
tp
D .U .T
IA S
0.01
+
- VDD
A
Fig 28a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 28c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 28b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig 29a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
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