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PDF IRHM7054 Data sheet ( Hoja de datos )
| Número de pieza | IRHM7054 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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Hay una vista previa y un enlace de descarga de IRHM7054 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD - 90887E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7054
JANSR2N7394
60V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number
IRHM7054
IRHM3054
Radiation Level
100K Rads (Si)
300K Rads (Si)
RDS(on)
0.027Ω
0.027Ω
ID QPL Part Number
35*A JANSR2N7394
35*A JANSF2N7394
IRHM4054 600K Rads (Si) 0.027Ω 35*A JANSG2N7394
IRHM8054 1000K Rads (Si) 0.027Ω 35*A JANSH2N7394
TO-254AA
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
35*
30 A
140
150 W
1.2 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy Á
500
mJ
IAR Avalanche Current À
35 A
EAR
Repetitive Avalanche Energy À
15 mJ
dv/dt
Peak Diode Recovery dv/dt Â
3.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063 in.(1.6mm) from case for 10s)
oC
Weight
9.3 (Typical )
g
For footnotes refer to the last page
*Current is limited by package
www.irf.com
1
08/30/04
1 page  
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Pre-Irradiation
IRHM7054, JANSR2N7394
8000
6000
VCGissS
=
=
0V,
Cgs
f = 1MHz
+ Cgd , Cds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
4000
Ciss
Coss
2000
0
1
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 35A
16
VDS = 48V
VDS = 30V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160 200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 25° C
TJ = 150° C
10
1 VGS = 0 V
0.4 1.0 1.6 2.2 2.8 3.4 4.0
VSD ,Source-to-Drain Voltage (V)
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100 100us
1ms
10 10ms
TTJC
=
=
25 ° C
150 ° C
Single Pulse
1
1 10
100 1000
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHM7054.PDF ] | |
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