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PDF 11N65C3 Data sheet ( Hoja de datos )

Número de pieza 11N65C3
Descripción SPP11N65C3
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



Total 14 Páginas
		
11N65C3 Hoja de datos, Descripción, Manual
www.datasheet4u.com
SPP11N65C3, SPA11N65C3
SPI11N65C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
VDS
RDS(on)
ID
650 V
0.38
11 A
P-TO262-3-1 P-TO220-3-31 P-TO220-3-1
P-TO220-3-31
3
12
Type
SPP11N65C3
SPA11N65C3
SPI11N65C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4557
P-TO220-3-31 Q67040-S4554
P-TO262-3-1 Q67040-S4561
Marking
11N65C3
11N65C3
11N65C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=2.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=4A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_I
SPA
11 111)
7 71)
33 33
340 340
Unit
A
A
mJ
0.6 0.6
44
±20 ±20
±30 ±30
125 33
-55...+150
A
V
W
°C
Page 1
2003-08-15

1 page

11N65C3 pdf
www.datasheet4u.com
1 Power dissipation
Ptot = f (TC)
SPP11N65C3
140
W
120
110
100
90
80
70
60
50
40
30
20
10
00
20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2
A
SPP11N65C3, SPA11N65C3
SPI11N65C3
2 Power dissipation FullPAK
Ptot = f (TC)
35
W
25
20
15
10
5
00 20 40 60 80 100 120 °C 160
TC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 2
A
10 1
10 1
10 0
tp = 0.0008 ms
tp = 0.01 ms
10 -1
tp = 0.1 ms
tp = 1 ms
DC
10
-2
10
0
10 1
10 0
tp = 0.0008 ms
tp = 0.01 ms
10 -1
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10 2 V 10 3
VDS
10
-2
10
0
Page 5
10 1
10 2 V 10 3
VDS
2003-08-15

5 Page

11N65C3 arduino
www.datasheet4u.com
Definition of diodes switching characteristics
SPP11N65C3, SPA11N65C3
SPI11N65C3
Page 11
2003-08-15

11 Page


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