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PDF SAE81C54 Data sheet ( Hoja de datos )

Número de pieza SAE81C54
Descripción CMOS RAM
Fabricantes Siemens 
Logotipo Siemens Logotipo



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CMOS RAM
Preliminary DataACMOS IC
Features
q 512 x 8 bit-organization
q Multiplexed address and data bus
q Tristate address and data lines
q On-chip address register
q Very low current consumption: 1 µA at 5.5 V
during standby
q Dual chip selection
q Wide supply voltage range from 2.5 V to 5.5 V
q Fully compatible 5 V ± 10 %
q Data retention up to 1.0 V
q Temperature range – 40 to 110 °C
SAE 81C54
P-DIP-16-1
Type
SAE 81C54 P
Ordering Code
Q67100-H8486
Package
P-DIP-16-1
The SAE 81C54 P is a static 4096-bit RAM (512 words by 8 bits) in Advanced CMOS
technology. The address and data bus in the multiplex operation allows directly
interfaces to 8-bit microprocessors/microcontroller families, e.g. SAB 8086, SAB 8088,
SAB 8051. Due to its low power dissipation of less than 1 µA in standby mode this
component requires only minimum supply current.
Semiconductor Group
1
09.94

1 page




SAE81C54 pdf
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Absolute Maximum Ratings
Parameter
Ambient temperature
Storage temperature range
Thermal resistance
system - air
SAE 81C54
Symbol
TA
Tstg
Rth SA
Limit Values
40 to 110
55 to 125
70
Unit
°C
°C
K/W
DC Characteristics
TA = – 40 to 110 °C; VDD = 2.5 to 5.5 V; VSS = 0 V
Parameter
Symbol
Limit Values
min.
typ. max.
Unit Test
Condition
Standby supply
current
Operating supply
current
IDD
IDD
1
500
µA TA = 25 °C
µA 100-kHz ALE
Operating supply
voltage
Standby supply
voltage
VDD
VDD
2.5
1.0
5.5 V
5.5 V Data retention
Input current
Output leakage
current
IIL
IQL
1 µA VI = 0 – 5.5 V
1 µA VQ = 0 – 5.5 V
floating
L-input voltage
(VDD < 4.5 V)
L-input voltage
(VDD > 4.5 V)
H-input voltage
H-input voltage
VI
VIL
VIH
VIH
– 0.8
– 0.8
0.6 x VDD
0.6 V
0.8 V
VDD + 0.8 V
VDD + 0.8 V
VDD = 5 V
Semiconductor Group
5

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