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PDF SBN13001 Data sheet ( Hoja de datos )
| Número de pieza | SBN13001 | |
| Descripción | High Voltage Fast-Switching NPN Power Transistor | |
| Fabricantes | SemiWell Semiconductor | |
| Logotipo |  |
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SemiWell Semiconductor
SBN13001
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 120ns@100mA)
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical 120mV@100mA/20mA)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as lighting system, switching regulator,
inverter and deflection circuit.
Symbol
1.Base ○
○ 2.Collector
○ 3.Emitter
TO-92
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP ＜ 5 ms )
Base Current
Base Peak Current ( tP ＜ 5 ms )
Total Dissipation at TA = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient
12 3
Value
700
400
8.0
0.2
0.4
0.1
0.2
750
- 65 ~ 150
150
Units
V
V
V
A
A
A
A
mW
°C
°C
Value
166
Units
°C/W
Oct, 2002. Rev. 1
Copyright@S emiWell S emiconduct or Co., Ltd., All rights reserved
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SBN13001.PDF ] | |
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