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PDF RMWP26001 Data sheet ( Hoja de datos )
| Número de pieza | RMWP26001 | |
| Descripción | 26 GHZ Power Amp | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
June 2004
RMWP26001
24–26.5 GHz Power Amplifier MMIC
General Description
The RMWP26001 is a 4-stage GaAs MMIC amplifier
designed as a 24 to 26.5 GHz Power Amplifier for use in
point to point and point to multi-point radios, and various
communications applications. In conjunction with other
Fairchild Semiconductor amplifiers, multipliers and mixers
it forms part of a complete 26 GHz transmit/receive chipset.
The RMWP26001 utilizes our 0.25µm power PHEMT
process and is sufficiently versatile to serve in a variety of
power amplifier applications.
Features
• 4mil substrate
• Small-signal gain 23dB (typ.)
• 1dB compressed Pout 24dBm (typ.)
• Chip size 2.85mm x 1.2mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TSTG
RJC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
531
+8
-30 to +85
-55 to +125
41.5
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWP26001 Rev. C
1 page  
www.DataRSeheceot4Um.cmomended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias supply
voltage of -1.5V to Vg.
Step 3: Slowly apply positive drain bias supply voltage of
+4V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 370mA.
Step 5: After the bias condition is established, the RF input
signal may now be applied at the appropriate frequency
band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
©2004 Fairchild Semiconductor Corporation
RMWP26001 Rev. C
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RMWP26001.PDF ] | |
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