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PDF RMWL05001 Data sheet ( Hoja de datos )

Número de pieza RMWL05001
Descripción 5 GHZ Low Noise Amplifier Mmic
Fabricantes Raytheon RF Components 
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RMWL05001
5 GHz Low Noise Amplifier MMIC
www.DataSheet4U.com
PRODUCT INFORMATION
Description
The RMWL05001 is a 2-stage GaAs MMIC amplifier designed as a 4.7 to 5.2 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL05001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
Features
Single positive supply operation
4 mil substrate
Noise figure 1.4 dB (typ.)
Small-signal gain 18 dB (typ.)
1dB compressed Pout 14 dBm (typ.)
Chip size 2.0 mm x 1.15 mm
Absolute
Maximum
Ratings
Parameter
Symbol
Positive DC voltage (+4 V Typical)
Positive DC current
RF Input Power (from 50 source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Vd
ID
PIN
TC
Tstg
RJC
Value
+6
113
+8
-30 to +85
-55 to +125
112
Units
Volts
mA
dBm
°C
°C
°C /W
Electrical
Characteristics
(At 25°C),
50 system,
Vd=+4 V
Single Bias Supply
Parameter
Min Typ Max Unit
Frequency Range
4.7
Noise Figure
Gain Small Signal at Pin=-20 dBm 14
Gain Variation vs. Frequency
Gain at 1dB Compression
Power Output at 1dB Compression
5.2
1.4 2.3
18 20
1
17
14
GHz
dB
dB
dB
dB
dBm
Parameter
Min Typ Max Unit
Drain Current at Pin=-20 dBm
50 mA
Input Return Loss (Pin=-15 dBm)
15 dB
Output Return Loss (Pin=-15 dBm)
15
dB
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 2, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

1 page




RMWL05001 pdf
RMWL05001
5 GHz Low Noise Amplifier MMIC
www.DataSheet4U.com
PRODUCT INFORMATION
Performance
Data
RMWL05001 5 GHz LNA Typical On-Wafer Noise Figure Measurements.
IDQ = 76 mA, VDD = 4 V (Self Biased). 50 Ohm Test Fixture Included
20 0
S21
18 -2
16 S11 -4
14 -6
12 -8
10 -10
S22
8 -12
6 -14
4 -16
2 -18
0 -20
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
Frequency (GHz)
www.raytheon.com/micro
RMWL05001 5 GHz LNA Typical Output Power Measurements.
IDQ = 70 mA, VDD = 4 V (Self Biased) 50 Ohm Test Fixture Included
16.00
15.60
15.20
14.80
14.40
14.00
13.60
13.20
12.80
12.40
12.00
4.60 4.70 4.80 4.90 5.00
Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
Revised March 2, 2001
Page 5
5.10
5.20 5.30
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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