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PDF RMWB11001 Data sheet ( Hoja de datos )

Número de pieza RMWB11001
Descripción 11 GHZ Buffer Amp
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! RMWB11001 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
June 2004
RMWB11001
11 GHz Buffer Amplifier MMIC
General Description
The RMWB11001 is a 2-stage GaAs MMIC amplifier
designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in
point to point and point to multi-point radios, and various
communications applications. In conjunction with other
Fairchild RF amplifiers, multipliers and mixers it forms part
of a complete 38 GHz transmit/receive chipset. The
RMWB11001 utilizes our 0.25µm power PHEMT process
and is sufficiently versatile to serve in a variety of medium
power amplifier applications.
Features
• 4 mil substrate
• Small-signal gain 21dB (typ.)
• Saturated Power Out 19dBm (typ.)
• Voltage Detector Included to Monitor Pout
• Chip size 2.0mm x 1.3mm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TSTG
RJC
Parameter
Positive DC Voltage (+4V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
8
104
+8
-30 to +85
-55 to +125
180
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMWB11001 Rev. C

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RMWB11001 pdf
www.DataPSeherefto4Ur.mcomance Data
RMWB11001, 11GHz Buffer Amplifier, Typical Performance
On-wafer Measurements, Vd=4V, Idq=36mA
25 0
S21
20
-5
15
S11
10
S22
5
-10
-15
-20
0
9.5
25
10
10.5
11
11.5
Frequency (GHz)
RMWB11001, 11GHz Buffer Amplifier,
Typical Performance, Vd=4V, Idq=36mA
Chip Bonded into 50Test Fixture
-25
12
20
15
10
5
-16
Pout @ 10.5GHz
Gain @ 10.5GHz
Pout @ 11.1GHz
Gain @ 11.1GHz
Pout @ 11.7GHz
Gain @ 11.7GHz
-12 -8
-4
Input Power (dBm)
0
4
RMWB11001, Typical Performance Variation with Temperature,
Vd=4V, Idq=36mA, Chip Bonded into 50Test Fixture
21
20
19
18
17
16
15
10.75
11
11.25
11.5
Frequency (GHz)
11.75
12
30
20
10
0
-10
-20
-30
-40
-50
-60
0
RMWB11001, 11GHz Buffer Amplifier,
Typical Performance, Vd=4V, Idq=36mA
Chip Bonded into 50Test Fixture
S21
S11
S22
5 10 15 20 25 30 35
Frequency (GHz)
10
5
0
-5
-10
-15
-20
40
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10.5
RMWB11001, 11GHz Buffer Amplifier,
Typical Performance, Vd=4V, Idq=36mA
Detector Voltage into 3kload at Pout=+18dBm
10.7 10.9 11.1 11.3 11.5
Frequency (GHz)
11.7
RMWB11001, Typical Performance Variation with Temperature,
Vd=4V, Idq=36mA, Chip Bonded into 50Test Fixture
19
18
17
16
15
10.75
11
11.25
11.5
Frequency (GHz)
11.75
12
©2004 Fairchild Semiconductor Corporation
RMWB11001 Rev. C

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