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PDF K25T120 Data sheet ( Hoja de datos )

Número de pieza K25T120
Descripción IKW25T120
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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K25T120 Hoja de datos, Descripción, Manual
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TrenchStop® Series
IKW25T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP314D
Short circuit withstand time – 10µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
E
PG-TO-247-3-21
Type
VCE
IC VCE(sat),Tj=25°C
IKW25T120 1200V 25A
1.7V
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction temperature
Storage temperature
Tj,max Marking Code
Package
150°C K25T120 PG-TO-247-3-21
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Value
1200
50
25
75
75
50
25
75
±20
10
190
-40...+150
-55...+150
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 May 06

1 page

K25T120 pdf
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TrenchStop® Series
IKW25T120
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=600V,IC=25A,
VGE=0/15V,
RG= 22,
CL σσ11))==13890pnFH ,
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=600V, IF=25A,
diF/dt=800A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
50
32
660
130
3.0
4.0
7.0
320
5.2
29
320
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
A/µs
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
5
Rev. 2.1 May 06

5 Page

K25T120 arduino
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TrenchStop® Series
IKW25T120
600V VCE
60A 60A
600V
400V
200V
40A 40A
IC
20A 20A
400V
200V
IC
0V
0us
0.5us
1us
t, TIME
1.5us
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=22, Tj = 150°C,
Dynamic test circuit in Figure E)
0A
VCE
0A
0us
0.5us
1us
1.5us
0V
t, TIME
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=22, Tj = 150°C,
Dynamic test circuit in Figure E)
D=0.5
10-1K/W
0.2
0.1
0.05
10-2K/W
0.02
R,(K/W)
0.01
0.229
0.192
single pulse 0.174
0.055
R1
τ, (s)
1.10*10-1
1.56*10-2
1.35*10-3
1.52*10-4
R2
10-3K/W
10µs
100µs
C1=τ1/R1 C2=τ2/R2
1ms 10ms 100ms
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
100K/W
D=0.5
0.2
0.1
10-1K/W
0.05
0.02
0.01
R,(K/W)
0.282
0.317
0.294
0.107
R1
τ, (s)
1.01*10-1
1.15*10-2
1.30*10-3
1.53*10-4
R2
10-2K/W
10µs
single pulse
C1=τ1/R1 C2=τ2/R2
100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
Power Semiconductors
11
Rev. 2.1 May 06

11 Page


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