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PDF FTD2003 Data sheet ( Hoja de datos )
| Número de pieza | FTD2003 | |
| Descripción | N-Channel Silicon MOS FET | |
| Fabricantes | Sanyo Semiconductor Corporation | |
| Logotipo |  |
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FTD2003
N- Channel Silicon MOS FET
Very High Speed-Switchng
Features
• Low ON-state resistance.
• 2.5V drive.
• Mount height of 1.1mm.
• Complex Type enabling high density mount
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(Pulse)
Allowable power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10µS, dutycycle≤1%
Mounted on ceramic board
(1000mm2 ! 0.8mm) 1unit
Mounted on ceramic board
(1000mm2 ! 0.8mm)
20
±10
2.2
(8.8)
0.8
1.0
150
--55 to +150
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
V(BR)DSS ID=1mA , VGS=0
min
20
Zero Gate Voltage Drain Current
IDSS
VDS=20V , VGS=0
Gate to Source Leakage Current
IGSS
VGS=±8V , VDS=0
Cutoff Voltage
VGS(off)
VDS=10V , ID=1mA
0.4
Forward Transfer Admittance
| yfs |
VDS=10V , ID=2.2A
3.8
Static Drain to Source
RDS(on) 1 ID=2.2A , VGS=4V
On State Resistance
RDS(on) 2 ID=0.5A , VGS=2.5V
Input Capacitance
Ciss VDS=10V , f=1MHz
Output Capacitance
Coss VDS=10V , f=1MHz
Reverse Transfer Capacitance
Crss VDS=10V , f=1MHz
Turn-ON Delay Time
td(on)
Rise Time
tr See Specified Test
Turn-OFF Delay Time
td(off)
Circuit
Fall Time
tf
Total Gate Charge
Qg
Gate Source Charge
Qgs VDS=10V, VGS=10V, ID=2.2A
Gate Drain Charge
Qgd
Diode Forward Voltage
VSD
IS=2.2A , VGS=0
Marking : D2003
Switching Time Test Circuit
VIN
4V
0V
VIN
VDD=10V
ID=2.2A
RL=4.5Ω
Electrical Connection
D2 S2 S2 G2
Case Outline
TSSOP8(unit:mm)
3.0
0.65
8 7 65
PW=10µS
D.C.≤1%
D VOUT
TENTATIVE
unit
V
V
A
A
W
W
°C
°C
typ max unit
V
10 µA
±10 µA
1.3 V
5.5 S
100 130 mΩ
130 180 mΩ
170 pF
90 pF
43 pF
10 ns
38 ns
30 ns
26 ns
9.5 nC
1 nC
1.5 nC
1.0 1.2 V
0.425
G
P.G 50Ω
FTD2003
S
D1 S1 S1 G1
1
23
4
0.25
Specifications and information herein are subject to change without notice.
0.125
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
981221TM2fXHD
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet FTD2003.PDF ] | |
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