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PDF UPA2503 Data sheet ( Hoja de datos )
| Número de pieza | UPA2503 | |
| Descripción | N-CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µ PA2503, which has a heat spreader, is N-channel
MOS Field Effect Transistor designed for power management
applications of notebook computers.
FEATURES
• µ PA2503 has a thin surface mount package with a heat
spreader. The land size is same as 8-pin TSSOP.
• Low on-state resistance
RDS(on)1 = 9.5 mΩ MAX. (VGS = 10.0 V, ID = 8.0 A)
RDS(on)2 = 15.1 mΩ MAX. (VGS = 4.5 V, ID = 8.0 A)
• Low Ciss: 1200 pF TYP. (VDS = 10.0 V, VGS = 0 V)
ORDERING INFORMATION
PART NUMBER
µ PA2503TM
PACKAGE
8PIN HWSON
PACKAGE DRAWING (Unit: mm)
18
27
36
45
5.8 ±0.1
6.4 ±0.1
0.10 S
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation Note1
VGSS
ID(DC)
ID(pulse)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
IAS
EAS
0.75 ±0.15
30.0
±20.0
±16.0
±64.0
2.7
150
−55 to +150
16.0
25.6
Notes 1. Mounted on FR-4 board of 25 cm2 x 1.6 mm, PW ≤ 10 sec
2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20.0 → 0 V
4.15 ±0.2
0.85 ±0.15
V
V
A EQUIVALENT CIRCUIT
A
W Drain
°C
°C
A Gate
mJ
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16682EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2003
1 page  
µ PA2503
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
www.DataShCeHeAt4NUN.cEoLmTEMPERATURE
25
ID = 8.0 A
Pulsed
20
15 VGS = 4.5 V
10.0 V
10
5
0
-50
0 50 100
Tch - Channel Temperature - °C
150
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 15.0 V
VGS = 10.0 V
RG = 10 Ω
td(off)
tf tr
td(on)
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
VGS = 0 V
Pulsed
10
1
0.1
0.01
0.4 0.6 0.8
1
VF(S-D) - Source to Drain Voltage - V
1.2
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
VGS = 0 V
f = 1.0 MHz
1000
Ciss
100
0.1
Coss
Crss
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT CHARACTERISTICS
5
VDD = 15.0 V
4 ID = 16.0 A
3
2
1
0
0 4 8 12 16
QG - Gate Charge - nC
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 16.0 A
10
EAS = 25.6 mJ
1 VDD = 15.0 V
RG = 25 Ω
VGS = 20.0 → 0 V
Starting Tch = 25°C
0.1
0.01
0.1
1
L - Inductive Load - mH
10
Data Sheet G16682EJ1V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UPA2503.PDF ] | |
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