|
|
Número de pieza | CHA1077A | |
Descripción | W-band Low Noise Amplifier | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHA1077A (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! www.DataSheet4U.com
CHA1077a
RoHS COMPLIANT
W-band Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1077a is a W-band monolithic 3-
stages low noise amplifier. All the active
devices are internally self-biased. This chip is
compatible with automatic equipment for
assembly.
The circuit is manufactured on P-HEMT
process: 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
W-band low noise amplifier
High gain
Wide operating frequency range
High temperature range
On-chip self biasing
Additional external resistor allows to
choose getting more gain instead of a
minimum noise factor
Automatic assembly oriented
Low DC power consumption
BCB layer protection
Chip size: 2.6 x 1.32 x 0.1mm
IN OUT
+V -V
W-band amplifier block-diagram
Small signal gain
Main Characteristics
Tamb = +25°C
Symbol
F_op
G_lin
NF
P_1dB
Parameter
Operating frequency
Small signal gain
Noise figure
Output power at 1dB gain compression
Min Typ Max Unit
76 77 GHz
15 dB
4.5 dB
9 dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. DSCHA1077a6013 - 13 Jan 06
1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page W-band LNA
CHA1077a
www.DaTtaSyhpeeitc4Ua.clomAssembly and Bias Configuration to increase the
gain :
L_in
µ- strip line
9
8
7
0 12
10991
6
5
4
L_out
µ- strip line
>= 120pF
+V
DC lines
R
-V
Let’s tune the value of the external resistor R to control the biasing point of the
first stage and then getting a higher gain for the LNA (trade-off ability between the
gain and the noise factor).
Typical value of the external resistor R :
R (kΩ)
0
2
Description
Low-noise configuration
Maximum gain configuration
Ref. DSCHA1077a6013 - 13 Jan 06
5/8 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet CHA1077A.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHA1077 | W-Band Low Noise Amplifier | United Monolithic Semiconductors |
CHA1077A | W-band Low Noise Amplifier | United Monolithic Semiconductors |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |