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PDF FDP150N10 Data sheet ( Hoja de datos )
| Número de pieza | FDP150N10 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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www.DataSheet4U.com
July 2008
FDP150N10
N-Channel PowerTrench® MOSFET
100V, 57A, 15mΩ
tm
Features
• RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
GDS
TO-220
FDP Series
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 3)
S
Ratings
100
±20
57
40
228
132
7.5
110
0.88
-55 to +150
300
Ratings
1.13
0.5
62.5
Units
V
V
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
FDP150N10 Rev. A
1
www.fairchildsemi.com
1 page  
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Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP150N10 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDP150N10.PDF ] | |
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