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PDF M38D5 Data sheet ( Hoja de datos )
| Número de pieza | M38D5 | |
| Descripción | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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38D5 Group
SIwNwGw.LDEat-aCShHeeIPt4U8.c-BomIT CMOS MICROCOMPUTER
REJ03B0158-0301
Rev.3.01
Aug 08, 2007
DESCRIPTION
The 38D5 Group is the 8-bit microcomputer based on the 740
Family core technology.
The 38D5 Group is pin-compatible with the 38C5 Group.
The 38D5 Group has an LCD drive control circuit, an A/D
converter, a serial interface, and a ROM correction function as
additional functions.
The QzROM version and the flash memory version are available.
The flash memory version does not have a selection function for
the oscillation start mode. Only the on-chip oscillator starts
oscillating.
The various microcomputers include variations of memory size,
and packaging. For details, refer to the section on part
numbering.
FEATURES
• Basic machine-language instructions ................................. 71
• The minimum instruction execution time ................... 0.32 µs
(at 12.5 MHz oscillation frequency)
• Memory size (QzROM version)
ROM ........................................................ 32 K to 60 K bytes
RAM ......................................................... 1536 to 2048 bytes
• Memory size (Flash memory version)
ROM ...................................................................... 60 K bytes
RAM ...................................................................... 2048 bytes
• Programmable input/output ports .. 59 (common to SEG: 36)
• Interrupts ............................................. 17 sources, 16 vectors
(Key input interrupt included)
• Timers ..................................................... 8-bit × 4, 16-bit × 2
• Serial interface
Serial I/O1 ...............8-bit × 1 (UART or Clock-synchronized)
Serial I/O2 .............................. 8-bit × 1 (Clock-synchronized)
• PWM .......... 10-bit × 2, 16-bit × 1 (common to IGBT output)
• A/D converter .......................................... 10-bit × 8 channels
(A/D converter can be operated in low-speed mode.)
• Watchdog timer ......................................................... 8-bit × 1
• ROM correction function ....................... 32 bytes × 2 vectors
• LED direct drive port ............................................................ 6
(average current: 15 mA, peak current: 30 mA, total current: 90 mA)
• LCD drive control circuit
Bias ............................................................................ 1/2, 1/3
Duty ............................................................... Static, 2, 3, 4, 8
Common output ................................................................. 4/8
Segment output .............................................................. 32/36
• Main clock generating circuit ............................................... 1
(connect to external ceramic resonator or on-chip oscillator)
• Sub-clock generating circuit ..................................................1
(connect to external quartz-crystal oscillator)
• Power source voltage (QzROM version)
[In frequency/2 mode]
f(XIN) ≤ 12.5 MHz.............................................. 4.5 to 5.5 V
f(XIN) ≤ 8 MHz................................................... 4.0 to 5.5 V
f(XIN) ≤ 4 MHz................................................... 2.0 to 5.5 V
f(XIN) ≤ 2 MHz................................................... 1.8 to 5.5 V
[In frequency/4 mode]
f(XIN) ≤ 16 MHz................................................. 4.5 to 5.5 V
f(XIN) ≤ 8 MHz................................................... 2.0 to 5.5 V
f(XIN) ≤ 4 MHz................................................... 1.8 to 5.5 V
[In frequency/8 mode]
f(XIN) ≤ 16 MHz................................................. 4.5 to 5.5 V
f(XIN) ≤ 8 MHz................................................... 2.0 to 5.5 V
f(XIN) ≤ 4 MHz................................................... 1.8 to 5.5 V
[In low-speed mode].............................................. 1.8 to 5.5 V
Note. 12.5 MHz < f(XIN) ≤ 16 MHz is not available in the fre-
quency/2 mode.
• Power source voltage (Flash memory version)
[In frequency/2 mode]
f(XIN) ≤ 12.5 MHz.............................................. 4.5 to 5.5 V
f(XIN) ≤ 8 MHz................................................... 4.0 to 5.5 V
f(XIN) ≤ 4 MHz................................................... 2.7 to 5.5 V
[In frequency/4 mode]
f(XIN) ≤ 16 MHz................................................. 4.5 to 5.5 V
f(XIN) ≤ 8 MHz................................................... 2.7 to 5.5 V
[In frequency/8 mode]
f(XIN) ≤ 16 MHz................................................. 4.5 to 5.5 V
f(XIN) ≤ 8 MHz................................................... 2.7 to 5.5 V
[In low-speed mode].............................................. 2.7 to 5.5 V
Note. 12.5 MHz < f(XIN) ≤ 16 MHz is not available in the fre-
quency/2 mode.
• Power dissipation (QzROM version)
• In frequency/2 mode ..................................... Typ. 32 mW
(VCC = 5 V, f(XIN) = 12.5 MHz, Ta = 25°C)
• In low-speed mode ........................................ Typ. 18 µW
(VCC = 2.5 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25°C)
• Power dissipation (Flash memory version)
• In frequency/2 mode ..................................... Typ. 20 mW
(VCC = 5 V, f(XIN) = 12.5 MHz, Ta = 25°C)
• In low-speed mode ...................................... Typ. 1.1 mW
(VCC = 2.7 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25°C)
• Operating temperature range ............................... −20 to 85°C
Flash Memory Mode
• Program/Erase voltage ............................. VCC = 2.7 to 5.5 V
• Program method ....................... Programming in unit of byte
• Erase method .................................................... Block erasing
• Program/Erase control by software command
APPLICATION
Household products, Consumer electronics, etc.
Rev.3.01 Aug 08, 2007 Page 1 of 134
REJ03B0158-0301
1 page  
38D5 Group
www.DataSheet4U.com
Table 2 Performance overview (2)
Parameter
Power dissipation
(QzROM version)
In frequency/2 mode
In low-speed mode
Power dissipation
(Flash memory version)
In frequency/2 mode
In low-speed mode
Input/Output characteristics Input/Output withstand voltage
Output current
Operating temperature range
Device structure
Package
Function
Std. 32 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25°C)
Std. 18 µW (Vcc = 2.5 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25°C)
Std. 20 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25°C)
Std. 1.1 mW (Vcc = 2.7 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25°C)
VCC
10 mA
-20 to 85°C
CMOS silicon gate
80-pin plastic molded LQFP/QFP
Rev.3.01 Aug 08, 2007 Page 5 of 134
REJ03B0158-0301
5 Page 
38D5 Group
www.DataSheet4U.com
Table 6 Differences between QzROM and flash memory versions
QzROM version
Oscillation circuit at reset and at returning from stop mode
Main clock XIN or on-chip oscillator selectable
by OSCSEL pin
Termination of OSCEL/CNVSS pin
OSCSEL = “H”
OSCSEL = “L”
Main clock oscillation at reset and at returning from
stop mode
Oscillation on
Stop
On-chip oscillator oscillation at reset and at returning
from stop mode
Stop
Oscillation on
System clock φ oscillation at reset and at returning
from stop mode
f(XIN)/8
f(OCO)/32
Mounting of main clock oscillation circuit
Required
Optional
On-chip oscillator oscillation in low speed-mode
Stop
Writing “1” to on-chip oscillator stop bit in on-chip
oscillator mode
On-chip oscillator is stopped
Reset input “L” pulse width
2 µs or more
Absolute maximum rating: OSCSEL/CNVSS pin
−0.3 to 8.0
Minimum operating power source voltage
1.8 V
A/D converter minimum operating power source voltage
2.0 V
NOTE:
1. For detailed specifications, confirm the descriptions in the Datasheet.
Flash memory version
On-chip oscillator
CNVSS = “L”
Stop
Oscillation on
f(OCO)/32
Optional
Stop by setting the on-chip
oscillator stop bit because it
is not stopped.
On-chip oscillator is not
stopped
2 ms or more
−0.3 to VCC + 0.3
2.7 V
2.7 V
Notes on Differences between QzROM and Flash Mem-
ory Versions
(1) The memory map, the writing modes and programming
circuits vary because of the differences in their internal
memories.
(2) The oscillation parameters of XIN-XOUT and XCIN-XCOUT
may vary.
(3) The QzROM version and the flash memory version MCUs
differ in their manufacturing processes, built-in ROM, and
layout patterns. Because of these differences, characteristic
values, operation margins, A/D conversion accuracy, noise
immunity, and noise radiation may vary within the specified
range of electrical characteristics.
(4) When switching from the flash memory version to the
QzROM version, implement system evaluations equivalent
to those implemented in the flash memory version.
(5) The both operations except the electrical characteristics are
same at the emulator (emulator MCU board: M38D59T-
RLFS).
Rev.3.01 Aug 08, 2007 Page 11 of 134
REJ03B0158-0301
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet M38D5.PDF ] | |
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