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PDF BLF574 Data sheet ( Hoja de datos )
| Número de pieza | BLF574 | |
| Descripción | HF / VHF power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF574
HF / VHF power LDMOS transistor
Rev. 01 — 8 December 2008
Preliminary data sheet
1. Product profile
1.1 General description
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial
applications in the HF to 500 MHz band.
Table 1. Application information
Mode of operation
CW
f
(MHz)
225
108
VDS
PL
Gp
ηD
(V)
(W) (dB)
(%)
50
500 26.5
70
50
600 27.5
73
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq
of 1000 mA:
N Average output power = 500 W
N Power gain = 26.5 dB
N Efficiency = 70 %
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (10 MHz to 500 MHz)
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
I Industrial, scientific and medical applications
I Broadcast transmitter applications
1 page  
NXP Semiconductors
www.DataSheet4U.com
BLF574
HF / VHF power LDMOS transistor
7. Application information
7.1 RF performance
RF performance in a 500 W application circuit at 225 MHz.
7.1.1 1-Tone CW
30
Gp
(dB)
28
26
24
001aaj127 80
30
001aaj128
ηD Gp
(%) (dB)
ηD (7)
60 28 (6)
(5)
Gp
40 26
(4)
(3)
(2)
(1)
20 24
22
0
0
200 400 600
PL(PEP) (W)
22
0
100 200 300 400 500
PL (W)
Fig 2.
VDS = 50 V; IDq = 1000 mA; f = 225 MHz.
Power gain and drain efficiency as functions of
load power; typical values
VDS = 50 V; f = 225 MHz.
(1) IDq = 400 mA
(2) IDq = 600 mA
(3) IDq = 800 mA
(4) IDq = 1000 mA
(5) IDq = 1200 mA
(6) IDq = 1400 mA
(7) IDq = 1800 mA
Fig 3. Power gain as function of load power; typical
values
BLF574_1
Preliminary data sheet
Rev. 01 — 8 December 2008
© NXP B.V. 2008. All rights reserved.
5 of 18
5 Page 
NXP Semiconductors
www.DataSheet4U.com
BLF574
HF / VHF power LDMOS transistor
8.2 RF performance
The following figures are measured in a class-AB production test circuit.
8.2.1 1-Tone CW
30
Gp
(dB)
28
26
24
001aaj134 80
ηD
ηD (%)
60
Gp
40
20
30
Gp
(dB)
28
26
24
001aaj135
(7)
(6)
(5)
(4)
(3)
(2)
(1)
22
0
0
100 200 300 400 500
PL (W)
22
0
100 200 300 400 500
PL (W)
VDS = 50 V; IDq = 1000 mA; f = 225 MHz.
Fig 10. Power gain and drain efficiency as functions of
load power; typical values
VDS = 50 V; f = 225 MHz.
(1) IDq = 400 mA
(2) IDq = 600 mA
(3) IDq = 800 mA
(4) IDq = 1000 mA
(5) IDq = 1200 mA
(6) IDq = 1400 mA
(7) IDq = 1800 mA
Fig 11. Power gain as function of load power; typical
values
BLF574_1
Preliminary data sheet
Rev. 01 — 8 December 2008
© NXP B.V. 2008. All rights reserved.
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