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PDF FDB24AN06LA0 Data sheet ( Hoja de datos )

Número de pieza FDB24AN06LA0
Descripción N-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDB24AN06LA0 Hoja de datos, Descripción, Manual

www.DataSheet4U.com
January 2004
FDB24AN06LA0 / FDP24AN06LA0
N-Channel PowerTrench® MOSFET
60V, 36A, 24m
Features
• rDS(ON) = 20m(Typ.), VGS = 5V, ID = 36A
• Qg(tot) = 16nC (Typ.), VGS = 5V
• Low Miller Charge
• Low QRR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 83547
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
GATE
DRAIN
(FLANGE)
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 25oC, VGS = 5V)
Continuous (TC = 100oC, VGS = 5V)
Continuous (TA = 25oC, VGS = 5V, RθJA = 43oC/W)
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Ratings
60
±20
40
36
25
7.8
Figure 4
36
75
0.5
-55 to 175
Units
V
V
A
A
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
2.0
62
43
oC/W
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2004 Fairchild Semiconductor Corporation
FDB24AN06LA0 / FDP24AN06LA0 Rev. A

1 page




FDB24AN06LA0 pdf
www.DataTSyhepeit4cUa.cloCmharacteristics TC = 25°C unless otherwise noted
1.25
1.00
0.75
0.50
VGS = VDS, ID = 250µA
1.15
1.10
ID = 250µA
1.05
1.00
0.95
0.25
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.90
-80
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
2500
1000
CISS = CGS + CGD
COSS CDS + CGD
10
VDD = 30V
8
6
CRSS = CGD
4
100
VGS = 0V, f = 1MHz
40
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 36A
ID = 5A
5 10 15 20 25 30
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Current
©2004 Fairchild Semiconductor Corporation
FDB24AN06LA0 / FDP24AN06LA0 Rev. A

5 Page





FDB24AN06LA0 arduino
TRADEMARKS
www.DataSheet4U.com
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FACT Quiet Series™ ISOPLANAR™
POP™
Stealth™
ActiveArray™ FAST
LittleFET™
Power247™
SuperFET™
Bottomless™ FASTr™
MICROCOUPLER™ PowerSaver™
SuperSOT™-3
CoolFET™
FPS™
MicroFET™
PowerTrench
SuperSOT™-6
CROSSVOLTFRFET™
MicroPak™
QFET
SuperSOT™-8
DOME™
GlobalOptoisolator™ MICROWIRE™
QS™
SyncFET™
EcoSPARK™ GTO™
MSX™
QT Optoelectronics™ TinyLogic
E2CMOSTM
HiSeC™
MSXPro™
Quiet Series™
TINYOPTO™
EnSignaTM
I2C™
OCX™
RapidConfigure™
TruTranslation™
FACT™
ImpliedDisconnect™ OCXPro™
Across the board. Around the world.™ OPTOLOGIC
RapidConnect™
UHC™
SILENT SWITCHERUltraFET
The Power Franchise™
OPTOPLANAR™ SMART START™ VCX™
Programmable Active Droop™
PACMAN™
SPM™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY
ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I8

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