|
|
PDF FDP20N50F Data sheet ( Hoja de datos )
| Número de pieza | FDP20N50F | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDP20N50F (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
March 2013
FDP20N50F / FDPF20N50FT
N-Channel UniFETTM FRFET® MOSFET
500 V, 20 A, 260 m
Features
• RDS(on) = 210 m (Typ.) @ VGS = 10 V, ID = 10 A
• Low Gate Charge (Typ. 50 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Aested
• Improve dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET® MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter appli-
cations such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
• Uninterruptible Power Supply
• AC-DC Power Supply
D
G
D
S
TO-220
GDS
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
G
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP20N50F FDPF20N50FT
500
±30
20 20*
12.9 12.9*
80 80*
1110
20
25
20
250 38.5
2.0 0.3
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
FDP20N50F
0.5
0.5
62.5
FDPF20N50FT
3.3
-
62.5
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve - FDPF20N50FT
5
0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
Single pulse
0.01
10-4
10-3
PDM
t1
t2
*Notes:
1. ZJC(t) = 3.3oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
10-2
10-1
100
101
102
103
Rectangular Pulse Duration [sec]
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDP20N50F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDP20N50 | N-Channel MOSFET | Fairchild Semiconductor |
| FDP20N50F | N-Channel MOSFET | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |