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PDF C122B1 Data sheet ( Hoja de datos )
| Número de pieza | C122B1 | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
wSwwi.lDiactaSohenet4UC.coomntrolled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for full-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
• Glass Passivated Junctions and Center Gate Fire for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts
• Different Leadform Configurations,
Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information
C122(ă)1
Series
SCRs
8 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Repetitive Peak Off-State Voltage(1) (TJ = 25 to 100°C, Gate Open)
Repetitive Peak Reverse Voltage
C122F1
C122A1
C122B1
C122D1
C122M1
C122N1
Peak Non-repetitive Reverse Voltage(1)
Forward Current RMS
(All Conduction Angles)
C122F1
C122A1
C122B1
C122D1
C122M1
C122N1
TC p 75°C
Symbol
VDRM
VRRM
VRSM
IT(RMS)
Value
50
100
200
400
600
800
75
200
300
500
700
800
8
Unit
Volts
Volts
Amps
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM 90 Amps
I2t 34 A2s
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a
constant current source such that the voltage ratings of the devices are exceeded.
36 Motorola Thyristor Device Data
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C122B1.PDF ] | |
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