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Shenzhen SY Semiconductors Co.,LTD.
EB SERIES TRANSISTORS
E3150
●FEATURES:①HIGH VOLTAGE CAPABILITY ②HIGH SPEED SWITCHING ③WIDE SOA
●APPLICATION:①FLUORESCENT LAMP ②ELECTRONIC BALLAST
●Absolute Maximum Ratings (Tc=25℃)
PARAMETER
Collector–Base Voltage
Collector–Emitter Voltage
Emitter –Base Voltage
Collector Current
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Tj
Tstg
VALUE
700
600
9
1.5
150
-65-150
UNIT
V
V
V
A
℃
℃
TO-220 NPN
● Electronic Characteristics (Tc=25℃)
CHARACTERISTICS
SYMBOL
Collector–Base Cutoff Current
ICBO
Collector–Emitter Cutoff Current
ICEO
Collector–Emitter Voltage
VCEO
Emitter –Base Voltage
VEBO
Collector–Emitter Saturation
Voltage
Vcesat
Base–Emitter Saturation Voltage
Vbesat
DC Current Gain
HFE
TEST CONDITION
VCB=700v
VCE=600v
IC=10mA IB=0
IE=1mA IC=0
IC=1A IB=0.25A
IC=0.5A IB=0.1A
VCE=5v IC=1mA
VCE=5v IC=0.2A
VCE=5v IC=1.0A
MIN
600
9
7
10
5
MAX
100
250
UNIT
µA
µA
V
V
1.0 V
1.2 V
40
●CLASSIFICATION OF HFE
HFE
15-20
20-25
25-30
30-35
SY semiconductors
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