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PDF RJK0349DSP Data sheet ( Hoja de datos )

Número de pieza RJK0349DSP
Descripción Silicon N Channel Power MOS FET Power Switching
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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No Preview Available ! RJK0349DSP Hoja de datos, Descripción, Manual

RJK0349DSP
www.DataSheet4U.com
Silicon N Channel Power MOS FET
Power Switching
Features
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.9 mtyp. (at VGS = 10 V)
Pb-free
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
REJ03G1659-0300
Rev.3.00
Jul 10, 2008
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
20
160
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
20
20
40
2.5
50
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1659-0300 Rev.3.00 Jul 10, 2008
Page 1 of 6

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RJK0349DSP pdf
RJK0349DSP
10
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Normalized Transient Thermal Impedance vs. Pulse Width
D=1
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.001
0.01
1shot pulse
θch - f(t) = γs (t) x θch - f
θch - f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
0.0001
10 µ 100 µ 1 m 10 m 100 m
1
10 100 1000 10000
Pulse Width PW (s)
Vin
15 V
Avalanche Test Circuit
VDS
Monitor
Rg
50
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
L IAP2
VDSS
VDSS – VDD
IAP
ID
V(BR)DSS
VDS
VDD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 10 V
Switching Time Waveform
90%
Vin
Vout
10%
10%
10%
90%
90%
td(on)
tr td(off)
tf
REJ03G1659-0300 Rev.3.00 Jul 10, 2008
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