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PDF P5506NVG Data sheet ( Hoja de datos )
| Número de pieza | P5506NVG | |
| Descripción | N- & P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Niko | |
| Logotipo |  |
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NIKO-SEM
www.DataSheet4U.com
N- & P-Channel Enhancement Mode
Field Effect Transistor
P5506NVG
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
N-Channel 60 55m
P-Channel -55 80m
ID
4.5A
-3.5A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
N-Channel P-Channel UNITS
60 -55 V
±20 ±20 V
4.5 -3.5
4 -3 A
20 -20
2
W
1.3
-55 to 150
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1%
TYPICAL
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
STATIC
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
MAXIMUM
62.5
UNITS
°C / W
LIMITS
UNIT
MIN TYP MAX
N-Ch 60
P-Ch -55
N-Ch 1.0 1.5 2.5
P-Ch -1.0 -1.5 -2.5
V
N-Ch
P-Ch
±100
nA
±100
1 AUG-17-2004
1 page  
NIKO-SEM
www.DataSheet4U.com
N- & P-Channel Enhancement Mode
Field Effect Transistor
P5506NVG
SOP-8
Lead-Free
5 AUG-17-2004
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet P5506NVG.PDF ] | |
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