(PDF) 2N6313 Datasheet - (2N6312 - 2N6314) Silicon Power Transistor

Número de pieza	2N6313
Descripción	(2N6312 - 2N6314) Silicon Power Transistor
Fabricantes	SavantIC
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No Preview Available ! SavantIC Semiconductor wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors Product Specification 2N6312 2N6313 2N6314 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6312 VCBO Collector-base voltage 2N6313 2N6314 2N6312 VCEO Collector-emitter voltage 2N6313 2N6314 VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IB Base current PD Total Power Dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE -40 -60 -80 -40 -60 -80 -5 -5 -10 -2 75 200 -65~200 UNIT V V V A A A W VALUE 2.32 UNIT /W 1 page

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PDF 2N6313 Data sheet ( Hoja de datos )