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PDF K15N120 Data sheet ( Hoja de datos )
| Número de pieza | K15N120 | |
| Descripción | FAST IGBT IN NPT-TECHNOLOGY | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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SKW15N120
www.DataSheet4U.com
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• Lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
SKW15N120
VCE
1200V
IC
15A
Eoff
1.5mJ
Tj
150°C
Marking
K15N120
Package
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
1200
30
15
52
52
Unit
V
A
32
15
50
±20
10
198
-55...+150
260
V
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2_2 Sep 08
1 page  
www.DataSheet4U.com
50A
SKW15N120
50A
40A
30A
VGE=17V
15V
13V
11V
20A 9V
7V
10A
40A
30A
20A
VGE=17V
15V
13V
11V
9V
7V
10A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
50A
40A
30A
TJ=+150°C
20A TJ=+25°C
TJ=-40°C
10A
0A
3V 5V 7V 9V 11V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
6V
5V
IC=30A
4V
IC=15A
3V
IC=7.5A
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2_2 Sep 08
5 Page 
www.DataSheet4U.com
PG-TO247-3
M
SKW15N120
M
MIN MAX
4.90 5.16
2.27 2.53
1.85 2.11
1.07 1.33
1.90 2.41
1.90 2.16
2.87 3.38
2.87 3.13
0.55 0.68
20.82
21.10
16.25
17.65
1.05 1.35
15.70
16.03
13.10
14.15
3.68 5.10
1.68 2.60
5.44
3
19.80
20.31
4.17 4.47
3.50 3.70
5.49 6.00
6.04 6.30
MIN
0.193
0.089
0.073
0.042
0.075
0.075
0.113
0.113
0.022
0.820
0.640
0.041
0.618
0.516
0.145
0.066
0.780
0.164
0.138
0.216
0.238
0.214
3
MAX
0.203
0.099
0.083
0.052
0.095
0.085
0.133
0.123
0.027
0.831
0.695
0.053
0.631
0.557
0.201
0.102
0.799
0.176
0.146
0.236
0.248
Z8B00003327
0
0 55
7.5mm
17-12-2007
03
Power Semiconductors
11
Rev. 2_2 Sep 08
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet K15N120.PDF ] | |
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