|
|
PDF K3645 Data sheet ( Hoja de datos )
| Número de pieza | K3645 | |
| Descripción | MOSFET ( Transistor ) - 2SK3645-01MR | |
| Fabricantes | Fuji Electric | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K3645 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
2SK3645-01MR
FUJI POWER MOSFET
Super FAP-G Serieswww.DataSheet4U.com
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
200304
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
100 V
VDSX *5
70 V
Continuous drain current
Pulsed drain current
ID
ID(puls]
±41 A
±164 A Equivalent circuit schematic
Gate-source voltage
VGS
±30 V
Non-repetitive Avalanche current IAS *2
Maximum Avalanche Energy
EAS *1
41
204.7
A
mJ
Drain(D)
Maximum Drain-Source dV/dt
dVDS/dt *4
20
kV/µs
Peak Diode Recovery dV/dt
dV/dt *3
5 kV/µs
Max. power dissipation
PD Ta=25°C
Tc=25°C
2.16
53
W
Gate(G)
Operating and storage
Tch
+150
°C
Source(S)
temperature range
Tstg
-55 to +150
°C
Isolation voltage
VISO *6
2 kVrms
*1 L=146µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch <=150°C
*3 IF<= -ID, -di/dt=50A/µs, Vcc<= BVDSS, Tch<= 150°C *4 VDS <= 100V *5 VGS=-30V *6 t=60sec f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V VDS=0V
Tch=25°C
Tch=125°C
ID=15A VGS=10V
ID=15A VDS=25V
VDS=75V
VGS=0V
f=1MHz
VCC=48V ID=15A
VGS=10V
RGS=10 Ω
VCC=50V
ID=30A
VGS=10V
L=146µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
Min.
100
3.0
9
41
Typ.
10
34
18
1110
280
22
16
23
31
16
32
13
9
1.10
0.1
0.38
Max.
5.0
25
250
100
44
1665
420
33
24
35
47
24
48
20
14
1.65
Units
V
V
µA
nA
mΩ
S
pF
ns
nC
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/denshi/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
2.359 °C/W
58.0 °C/W
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet K3645.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K3640 | Photocoupler(These Photocouplers cosist of two Gallium Arsenide Infrared Emitting) |  KODENSHI KOREA CORP |
| K3641 | Photocoupler(These Photocouplers cosist of two Gallium Arsenide Infrared Emitting) | KODENSHI KOREA CORP |
| K3642 | MOSFET ( Transistor ) - 2SK3642 |  NEC |
| K3645 | MOSFET ( Transistor ) - 2SK3645-01MR | Fuji Electric |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |