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PDF NTE2662 Data sheet ( Hoja de datos )
| Número de pieza | NTE2662 | |
| Descripción | Silicon NPN Transistor High Frequency | |
| Fabricantes | NTE Electronics | |
| Logotipo |  |
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NTE2662
Silicon NPN Transistor
High Frequency, Low Noise RF
Description:
The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for os-
cillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high
immunity to pushing effects.
Features:
D New Miniature Surface Mount Package
− Small Transistor Footprint
− 1.0mm x 0.5mm x 0.5mm
− Low Profile / 0.50mm Package Height
− Flat Lead Style for Better RF Performance
D Ideal for ≤ 3GHz Oscillators
D Low Phase Noise
D Low Pushing Factor
Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified)
Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector−to−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
Emitter−to−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (Note 2), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Note 1. Operation in excess of any one of these parameters may result in permanent damage.
Note 2. With device mounted on 1.8cm2 x 1.0mm glass epoxy board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Gain Bandwidth
Insertion Power Gain
fT VCE = 1V, f = 2GHz
|S21E| VNCoEte=31V, f = 2GHz,
IC = 5mA 3.0 4.5
IC = 15mA 5.0 6.5
IC = 5mA 3.0 4.0
IC = 15mA 4.5 5.5
− GHz
− GHz
− dB
− dB
Note 3. Pulsed measurement, Pulse Width ≤ 350μs, Duty Cycle ≤ 2%.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE2662.PDF ] | |
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