|
|
PDF IRFY044CM Data sheet ( Hoja de datos )
| Número de pieza | IRFY044CM | |
| Descripción | POWER MOSFET N-CHANNE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFY044CM (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Provisional Data Sheet No. PD 9.1285C
www.DataSheet4U.com
HEXFET® POWER MOSFET
IRFY044CM
N-CHANNEL
60 Volt, 0.040Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Product Summary
Part Number
IRFY044CM
BVDSS
60V
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability.They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Features
n Hermetically sealed
n Electrically isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic eyelets
RDS(on)
0.040Ω
ID
16A*
Absolute Maximum Ratings
ID @ VGS=10V, TC = 25°C
ID @ VGS=10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
Tstg
Parameter
IRFY044CM
Continuous Drain Current
16*
Continuous Drain Current
16*
Pulsed Drain Current
156
Max. Power Dissipation
100
Linear Derating Factor
0.8
Gate-to-Source Voltage
±20
Single Pulse Avalance Energy
100
Avalance Current
16*
Repetitive Avalanche Energy
10
Peak Diode Recovery dv/dt
4.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in (1.6mm) from case for 10 sec)
Weight
4.3(typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
°C
g
* ID current limited by pin diameter
1 page  
IRFY044CM Device
1010
www.DataSheet4U.com
11
0.50
0.20
0.10
.01.1 0.05
0.02
0.01
0..0011
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ= PDM x Z thJC + TC
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
VDS L
D R IVE R
R G D .U .T
IAS
tp 0.01Ω
+
-
VD D
A
Fig. 12a — Unclamped Inductive Test Circuit
V (B R)DSS
tp
I AS
Fig. 12b — Unclamped Inductive Waveforms
100
80
60
40
20
ID = 51A
0 VDD = 25V
25 50
75
A
100 125 150 175
S tarting TJ , Ju nctio n Te m p eratu re (°C )
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IRFY044CM.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFY044C | N-CHANNEL POWER MOSFET |  Seme LAB |
| IRFY044CM | POWER MOSFET N-CHANNE | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |