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PDF IRF6629TRPBF Data sheet ( Hoja de datos )

Número de pieza IRF6629TRPBF
Descripción DirectFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 97235
IRF6629PbF
www.DataSheet4U.com
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
IRF6629TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 1.6m@ 10V 2.1m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
34nC 11nC 4.2nC 27nC 23nC 1.8V
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6629PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6629PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6629PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±20
29
23
180
230
1170
23
Units
V
A
mJ
A
8
7
6
5
4
3
2
1
0
TJ = 25°C
246
ID = 29A
TJ = 125°C
8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
5.0 ID= 23A
4.0
3.0
VDS= 20V
VDS= 13V
VDS= 5.0V
2.0
1.0
0.0
0
10 20 30 40
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 4.4mH, RG = 25, IAS = 23A.
1
07/11/06

1 page




IRF6629TRPBF pdf
1000
VGS = 0V
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TJ = 150°C
100 TJ = 25°C
TJ = -40°C
10
1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
5000
4000
3000
IRF6629PbF
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
10
10msec
1
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.01
0.10
1.00
10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
3.0
2.5
2.0
1.5 ID = 100µA
ID = 250µA
ID = 1.0mA
1.0 ID = 1.0A
0.5
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
ID
TOP 0.71A
1.2A
BOTTOM 23A
2000
1000
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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