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Número de pieza | NCP1393B | |
Descripción | High-Voltage Half-Bridge Driver | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NCP1393B
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High-Voltage Half-Bridge
Driver with Inbuilt
Oscillator
The NCP1393B is a self−oscillating high voltage MOSFET driver
primarily tailored for the applications using half−bridge topology. Due
to its proprietary high−voltage technology, the driver accepts bulk
voltages up to 600 V. Operating frequency of the driver can be
adjusted from 25 kHz to 250 kHz using a single resistor. Adjustable
brown−out protection assures correct bulk voltage operating range. An
internal 100 ms PFC delay timer guarantees that the main downstream
converter will be turned on in the time the bulk voltage is fully
stabilized. The device provides fixed dead−time which helps to lower
the shoot−through current.
Features
• Wide Operating Frequency Range − from 25 kHz to 250 kHz
• Minimum Frequency Adjust Accuracy $3%
• Fixed Dead Time − 0.6 ms
• Adjustable Brown−out Protection for a Simple PFC Association
• 100 ms PFC Delay Timer
• Latched Input for Severe Fault Conditions, e.g. Overtemperature or
OVP
• Internal 16 V VCC Clamp
• Low Startup Current of 50 mA Maximum
• 1 A / 0.5 A Peak Current Sink / Source Drive Capability
• Operation up to 600 V Bulk Voltage
• Internal Temperature Shutdown
• SOIC−8 Package
• These are Pb−Free Devices
Typical Applications
• Flat Panel Display Power Converters
• Low Cost Resonant SMPS
• High Power AC/DC Adapters for Notebooks
• Offline Battery Chargers
• Lamp Ballasts
http://onsemi.com
MARKING
DIAGRAMS
8
1
SOIC−8
CASE 751
8
1393B
ALYWW
G
1
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G = Pb−Free Package
VCC
Rt
BO
GND
PINOUT
Vboot
Mupper
HB
Mlower
ORDERING INFORMATION
Device
Package
Shipping†
NCP1393BDR2G SOIC−8
(Pb−Free)
2500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
October, 2008 − Rev. 1
1
Publication Order Number:
NCP1393/D
1 page NCP1393B
ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, Max TJ = 150°C,
VCC = 12 V, unless otherwise noted)
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Characteristic
Pin Symbol Min Typ Max Unit
SUPPLY SECTION
Turn−On Threshold Level, VCC Going Up
Minimum Operating Voltage after Turn−On
Startup Voltage on the Floating Section
Cutoff Voltage on the Floating Section
VCC Level at which the Internal Logic gets Reset
Startup Current, VCC < VCCON, 0°C v Tamb v +125°C
Startup Current, VCC < VCCON, −40°C v Tamb < 0°C
Internal IC Consumption, No Output Load on Pins 8/7 − 5/4, Fsw = 100 kHz
Internal IC Consumption, 1 nF Output Load on Pins 8/7 − 5/4, Fsw = 100 kHz
Consumption in Fault Mode (Drivers Disabled, VCC > VCC(min), RT = 3.5 kW)
Consumption During PFC Delay Period, 0°C v Tamb v +125°C
Consumption During PFC Delay Period, −40°C v Tamb < 0°C
Internal IC Consumption, No Output Load on Pin 8/7 FWS = 100 kHz
Internal IC Consumption, 1 nF Output Load on Pin 8/7 FWS = 100 kHz
Consumption in Fault Mode (Drivers Disabled, Vboot > Vbootmin)
VCC Zener Clamp Voltage @ 20 mA
INTERNAL OSCILLATOR
1
VCCON
10 11 12
V
1
VCCmin
8 9 10 V
1
VbootON
7.8 8.8 9.8
V
1
Vbootmin 7 8 9
V
1
VCCreset
− 6.5 −
V
1 ICC − − 50 mA
1 ICC − − 65 mA
1
ICC1
− 2.2 −
mA
1
ICC2
− 3.4 −
mA
1
ICC3
− 2.56 −
mA
ICC4
− − 400 mA
ICC4
− − 470 mA
8
Iboot1
− 0.3 −
mA
8
Iboot2
− 1.44 −
mA
8
Iboot3
− 0.1 −
mA
1
VCCclamp 15.4 16 17.5
V
Minimum Switching Frequency, Rt = 35 kW on Pin 2, DT = 600 ns
Maximum Switching Frequency, Rt = 3.5 kW on Pin 2, DT = 600 ns
Reference Voltage for all Current Generations
Internal Resistance Discharging Csoft−start
Operating Duty Cycle Symmetry
2 FSW min 24.25 25 25.75 kHz
2 FSW max 208 245 282 kHz
2
Vref RT
3.33 3.5 3.67
V
2
Rtdischarge
− 500 −
W
5, 7
DC
48 50 52
%
NOTE: Maximum capacitance directly connected to Pin 2 must be under 100 pF.
DRIVE OUTPUT
Output Voltage Rise Time @ CL = 1 nF, 10−90% of Output Signal
Output Voltage Fall Time @ CL = 1 nF, 10−90% of Output Signal
Source Resistance
Sink Resistance
Dead−Time (Measured Between 50% of Rise and Fall Edge)
Leakage Current on High Voltage Pins to GND (600 Vdc)
5, 7
5, 7
5, 7
5, 7
5,7
6,7,8
Tr
Tf
ROH
ROL
T_dead
IHV_Leak
− 40 −
− 20 −
− 12 −
−5−
540 610 720
−−5
ns
ns
W
W
ns
mA
PROTECTION
Brown−Out Input Bias Current
Brown−Out Level
Hysteresis Current, Vpin3 < VBO
Latching Voltage on BO Pin
Propagation Delay Before Drivers are Stopped
Delay Before Any Driver Restart
Temperature Shutdown
Hysteresis
2. Maximum capacitance directly connected to Pin 2 must be under 100 pF.
3
IBObias
− 0.01 −
mA
3 VBO 0.95 1 1.05 V
3 IBO 15.6 18.2 20.7 mA
3
Vlatch
1.9 2 2.1
V
3
EN Delay − 20 −
ms
− PFC Delay − 100 − ms
−
TSD
140 − − °C
−
TSDhyste
− 30 −
°C
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5
5 Page NCP1393B
Vbulk
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Rupper
BO
Rlower
SW
IBD
+
−
+− VrefBO
20ms
Filter
to BO_OK and gates
To PFC Delay
High Level for 50 ms after VCC On
Figure 23. The internal Brown−Out Configuration with an Offset Current Sink
A resistive divider made of Rupper and Rlower, brings a
portion of the HV rail on Pin 3. Below the turn−on level,
the 18.2 mA current sink (IBO) is on. Therefore, the turn−on
level is higher than the level given by the division ratio
brought by the resistive divider. To the contrary, when the
internal BO_OK signal is high (PFC timer runs or Mlower
and Mupper pulse), the IBO sink is deactivated. As a result,
it becomes possible to select the turn−on and turn−off levels
via a few lines of algebra:
IBO is ON
ǒ ǓVrefBO
+
Vbulk1
@
Rlower
Rlower ) Rupper
*
IBO
@
Rlower @ Rupper
Rlower ) Rupper
(eq. 1)
IBO is OFF
VrefBO
+
Vbulk2
@
Rlower
Rlower ) Rupper
We can extract Rlower from Equation 2 and plug it into Equation 1, then solve for Rupper:
Rlower
+
VrefBO
@
IBO
Vbulk1 * Vbulk2
@ ǒVbulk2 * VrefBOǓ
(eq. 2)
(eq. 3)
Rupper
+
Rlower
@
Vbulk2 * VrefBO
VrefBO
(eq. 4)
If we decide to turn−on our converter for Vbulk1 equals 350 V and turn it off for Vbulk2 equals 250 V, then for IBO = 18.2 mA
and VrefBO = 1.0 V we obtain:
Rupper = 5.494 MW
Rlower = 22.066 V
The bridge power dissipation is 4002 / 5.517 MW = 29 mW when front−end PFC stage delivers 400 V. Figure 24 simulation
result confirms our calculations.
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11
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet NCP1393B.PDF ] |
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NCP1393B | High-Voltage Half-Bridge Driver | ON Semiconductor |
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