(PDF) LLE18100X Datasheet - NPN silicon planar epitaxial microwave power transistor

Número de pieza	LLE18100X
Descripción	NPN silicon planar epitaxial microwave power transistor
Fabricantes	NXP Semiconductors
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No Preview Available ! DISCRETE SEMICONDUCTORS DATA SHEET LLE18100X NPN silicon planar epitaxial microwave power transistor Product speciﬁcation November 1994 1 page Philips Semiconductors NPN silicon planar epitaxial microwave power transistor Product speciﬁcation LLE18100X handbook, full pagewidth 30 mm 30 mm 40 mm 1 3 9.1 3 3.5 3.4 2 0.7 0.7 5 1 input 0.635 3.2 4.9 11.5 6.5 3.2 2.3 6 2 11 0.7 6 1 3 0.7 1 5.5 2 10 0.635 40 mm output Dimensions in mm Substrate : Epsilam 10 Thickness : 0.635 mm Permittivity : εr = 10 MCD660 Fig.4 Prematching test circuit board. List of components (see bias circuit) COMPONENT DESCRIPTION TR1 transistor, BDT85 (or equivalent) D1 diode, BY239800 (or equivalent) note 1 D2 diode, BY239800 note 2 R1 resistor R2 resistor R3 resistor P1 potentiometer, 10 turns (sfernice) C1 electrolytic capacitor C5, C6 feedthrough bypass capacitor L1 5 turns 0.5 mm copper wire with ferrite bead L2 5 turns 0.5 mm copper wire Notes 1. In thermal contact with TR1. 2. In thermal contact with D.U.T. VALUE CATALOGUE NO. 100 Ω 3.3 kΩ 56 Ω 4.7 kΩ 10 µF, 40 V 1500 pF Erie, ref. 1250-003 November 1994 5 5 Page

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