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PDF LL5711 Data sheet ( Hoja de datos )
| Número de pieza | LL5711 | |
| Descripción | Schottky Diodes | |
| Fabricantes | General Semiconductor | |
| Logotipo |  |
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LL5711 and LL6263
Schottky Diodes
MiniMELF (SOD-80C)
Cathode Band
.063 (1.6) Dia.
.051 (1.3)
.146 (3.7)
.130 (3.3)
.019 (0.48)
.011 (0.28)
Dimensions in inches and (millimeters)
Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steer-
ing, biasing and coupling diodes for fast switching
and low logic level applications.
• This diode is also available in the DO-35 case
with type designation 1N5711 and 1N6263.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Cathode Band Color: Green
Packaging Codes/Options:
D1/10K per 13” reel (8mm tape), 20K/box
D2/2.5K per 7” reel (8mm tape), 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak Inverse Voltage
Power Dissipation (Infinite Heatsink)
LL5711
LL6263
VRRM
Ptot
70
60
400(1)
V
mW
Maximum Single Cycle Surge 10µs Square Wave
IFSM
2.0
A
Junction Temperature
Tj 125 °C
Storage Temperature Range
TS –55 to +150 °C
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Breakdown Voltage
LL5711
LL6263
V(BR)R
IR = 10µA
Leakage Current
IR VR = 50V
Forward Voltage Drop
VF
IF = 1.0mA
IF = 15mA
Junction Capacitance
Ctot VR = 0V, f = 1MHz
Reverse Recovery Time
trr
IF = IR = 5mA,
recover to 0.1IR
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Min Typ Max Unit
70 — —
60 — —
V
— — 200 nA
—
—
—
—
0.41
1.0
V
— — 2.2 pF
— — 1 ns
10/6/00
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet LL5711.PDF ] | |
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