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PDF SIHFZ48 Data sheet ( Hoja de datos )
| Número de pieza | SIHFZ48 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Power MOSFET
IRFZ48, SiHFZ48
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
www.DataSheet4UC.coonmfiguration
60
VGS = 10 V
110
29
36
Single
0.018
TO-220
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Ultra Low On-Resistance
• Very Low Thermal Resistance
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFZ48PbF
SiHFZ48-E3
IRFZ48
SiHFZ48
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 22 µH, RG = 25 Ω IAS = 72 A (see fig. 12).
c. ISD ≤ 72 A, dV/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case
e. Current limited by the package, (die current = 72 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
60
± 20
50
50
290
1.3
100
50
19
190
4.5
- 55 to + 175
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91294
S-Pending-Rev. A, 23-Jul-08
www.vishay.com
1
1 page  
www.DataSheet4U.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFZ48, SiHFZ48
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91294
S-Pending-Rev. A, 23-Jul-08
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SIHFZ48.PDF ] | |
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