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PDF RMDA1840 Data sheet ( Hoja de datos )
| Número de pieza | RMDA1840 | |
| Descripción | 18-40 GHz Broad Band Driver Amplifier MMIC | |
| Fabricantes | ETC | |
| Logotipo |  |
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Description
Features
www.DataSheet4U.com
RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
PRODUCT INFORMATION
The RMDA1840 is a 4-stage GaAs MMIC amplifier designed as a 18 to 40 GHz broad band amplifier for use in point
to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. The
RMDA1840 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of
applications, such as a driver amplifier or a frequency multiplier.
4 mil substrate
Small-signal gain 22 dB (typ.)
Pout 1 dB comp 23 dBm (typ.)
Chip size 4.67 mm x 2.00 mm
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+5 V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
Tstg
RJC
Value
+6
-2
+8
442
+15
-30 to +85
-55 to +125
53
Units
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C),
50 Ω system,
Vd = +5 V,
Quiescent
Current
Idq = 400 mA
Parameter
Frequency Range
Gate Supply Voltage (Vg)1
Gain Small Signal at
Pin = -5 dBm
Gain Variation vs
Frequency
Gain at 1dB Compression
Power Output at 1 dB
Compression
Min
18
20
Typ
-0.2
22
+/-2.5
21
23
Max Unit
40 GHz
V
dB
dB
dB
dBm
Parameter
Min Typ Max Unit
Power Output Saturated:
Pin = +3 dBm
Power Added Efficiency
(PAE): at P1dB
Input Return Loss
(Pin = -5 dBm)
Output Return Loss
(Pin = -5 dBm)
21
24
15
8
10
dBm
%
dB
dB
www.raytheon.com/micro
Notes:
1. Typical range of gate voltage is -1.0 to 0 V to set Idq of 400 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised January 15, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
1 page  
Performance
Data
RMDA1840
18-40 GHz Broad Band Driver Amplifier
MMIC
PRODUCT INFORMATION
Pout vs. Pin
Vd = 5V, Id = 400mA
27
25
www.DataSheet4U.com
23
21
19
18 GHz
29 GHz
40 GHz
17
15
-6 -4 -2 0 2 4
Pin (dBm)
Gain vs. Pin
Vd = 5V, Id = 400mA
23
22.5
22
21.5
21
20.5
18 GHz
29 GHz
40 GHz
20
19.5
19
-6 -4 -2 0 2 4
Pin (dBm)
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised January 15, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RMDA1840.PDF ] | |
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