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PDF 2SC4115 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4115 | |
| Descripción | Transistor | |
| Fabricantes | Jiangsu | |
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Hay una vista previa y un enlace de descarga de 2SC4115 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89 Plastic-Encapsulate Transistors
2SC4115 TRANSISTOR (NPN)
FEATURES
z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A)
www.DataShzeet4UE.cxocmellent current gain characteristics.
z Complements to 2SA1585
SOT-89
1. BASE
1
2. COLLECTOR
2
3
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
20
6
3
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage*
Transition frequency
*pulse test
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCEsat
fT
Test conditions
IC= 50μA, IE=0
IC=1mA , IB=0
IE=50μA, IC=0
VCB=30V, IE=0
VEB= 5V, IC=0
VCE=2V, IC= 0.1A
IC= 2A, IB=0.1A
VCE=2V, IC=0.5 A
F=100MHz
MIN TYP
MAX UNIT
40 V
20 V
6V
0.1 μA
0.1 μA
120 560
0.5 V
200 290
MHz
CLASSIFICATION OF hFE
Rank
Range
marking
Q
120-270
4115Q
R
180-390
4115R
S
270-560
4115S
1 page | ||
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| PDF Descargar | [ Datasheet 2SC4115.PDF ] | |
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