|
|
PDF C5804 Data sheet ( Hoja de datos )
| Número de pieza | C5804 | |
| Descripción | NPN Transistor - 2SC5804 | |
| Fabricantes | Isahaya Electronics Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de C5804 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
〈SMALL-SIGNAL TRANSISTOR〉
DESCRIPTION
2SC5804 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
Complementary with 2SC3052.
FEATURE
www.DataShe●etS4uUp.ecro-mthin flat lead type package. t=0.45mm
●Excellent linearly of DC forward current gain.
●Low collector to emitter saturation voltage
VCE(sat)=0.3V max (@Ic=100mA/IB=10mA)
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application.
2SC5804
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit：ｍｍ
0.2 0.8 0.2
①
②③
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO Collector to Base voltage
VCEO Collector to Emitter voltage
VEBO Emitter to Base voltage
I O Collector current
Pc Collector dissipation
Tj Junction temperature
Tstg Storage temperature
Ratings
50
6
50
200
100
＋125
-55～＋125
Unit
V
V
DaVtaSheet4U.com
mA
mW
℃
℃
JEITA-：、JEDEC：－
ISAHAYA：T-USM
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
IC=100μA, R BE=∞
V CB=50V, I E=0mA
V EB=6V, I C=0mA
V CE=6V, I C=1mA
V CE=6V, I C=0.1mA
IC=100mA, I B=10mA
V CE=6V, I E=-10mA
V CB=6V, I E=0mA,f=1MHz
V CE=6V, I E=-0.1mA,f=1kHz,RG=2kΩ
Min
50
-
-
150
90
-
-
-
-
Limits
Typ
―
-
-
※
-
-
200
2.5
-
Max
―
0.1
0.1
800
-
0.3
-
-
15
DataShee
Unit
V
μA
μA
-
-
v
MHz
pF
dB
※ It shows hFE classification in below table.
Item E F
hFE 150～300 250～500
Abbrivation
LE
LF
G
400～800
LG
DataSheet4U.com
ISAHAYA ELECTRONICS CORPORATION
DataSheet4 U .com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C5804.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| C580 | VCO Model |  Z-Communications |
| C5800 | NPN SILICON RF TRANSISTOR |  Renesas |
| C5801 | NPN Transistor - 2SC5801 |  NEC |
| C5802 | NPN Transistor - 2SC5802 |  SavantIC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |