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PDF GF4412 Data sheet ( Hoja de datos )
| Número de pieza | GF4412 | |
| Descripción | N-channel Enhancement-mode MOSFET | |
| Fabricantes | General Semiconductor | |
| Logotipo |  |
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GF4412
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
SO-8
VDS 30V RDS(ON) 28mΩ ID 7A
0.197 (5.00)
0.189 (4.80)
www.DataSheet4U.com
8
1
0.050 (1.27)
5
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
4
Dimensions in inches
and (millimeters)
0.020 (0.51)
0.013 (0.33)
0.019
0.010
(0.48)
(0.25)
x
45
°
0.009 (0.23)
0.007 (0.18)
0.009 (0.23)
0.004 (0.10)
0.069 (1.75)
0.053 (1.35)
0°– 8°
0.050(1.27)
0.016 (0.41)
0.245 (6.22)
Min.
0.05 (1.27)
0.04 (1.02)
0.165 (4.19)
0.155 (3.94)
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
Mounting Pad Layout
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 0.5g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS ±20
Continuous Drain Current
TJ = 150°C(1)
TA = 25°C
TA = 70°C
ID
7
5.8
Pulsed Drain Current
Continuous Source Current (Diode Conduction)(1)
IDM
IS
30
2.3
Maximum Power Dissipation(1)
TA = 25°C
TA = 70°C
PD
2.5
1.6
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient(1) Thermal Resistance
TJ, Tstg
RθJA
–55 to 150
50
Notes: (1) Surface mounted on FR4 board, t ≤ 10 sec.
Unit
V
A
W
°C
°C/W
7/10/01
1 page  
GF4412
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
42
41
40
www.DataSheet4U.com
39
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
ID = 250µA
Fig. 11 – Transient Thermal
Impedance
38
37
36
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
70
60
50
40
30
20
10
0
0.01
0.1
1
10 100
Fig. 13 – Maximum Safe Operating Area
100
10
RDS(ON) Limit
100µs
10ms 1ms
100ms
1s
1
10s
0.1 VGS = 10V
Single Pulse
on 1-in2 2oz Cu.
TA = 25°C
0.01
0.1
1
DC
10
VDS -- Drain-Source Voltage (V)
100
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet GF4412.PDF ] | |
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