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PDF IR6311G Data sheet ( Hoja de datos )

Número de pieza IR6311G
Descripción INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Fabricantes International Rectifier 
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No Preview Available ! IR6311G Hoja de datos, Descripción, Manual

Data Sheet 6.124-G
IR6311G
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
Features
PWM Current Limit for Short Circuit Protection
Over-Temperature Protection
www.DataSheet4U.com Active Output Negative Clamp
Reverse Battery Protection for Logic Circuit
Broken Ground Protection
Short to VCC Protection
Low Noise Charge Pump
Sleep Mode Supply Current
4kV ESD Protection On All Pins
Logic Ground Isolated From Power Ground
General Description
The IR6311G is a monolithic HIGH SIDE SWITCH with built
in short circuit, over- temperature, ESD, inductive load turn
off capability and diagnostic feedback.
The on-chip protection circuit goes into PWM mode, limiting
the average current during short circuit if the drain current
exceeds 5A. The protection circuit latches off the high side
switch if the junction temperature exceeds 170oC and latches
on after the junction temperature falls by 10oC. The Vcc
(drain) to OUT (source) voltage is actively clamped at 55V,
improving its performance during turn off with inductive loads.
The on-chip charge pump high side driver stage is floating
and referenced to the source of the power MOSFET. Thus
the logic to power ground isolation can be as high as 50V.
This allows operation with larger offset as well as controlling
the switch during load energy recirculation or regeneration.
A diagnostic pin is provided for status feedback of short
circuit, over temperature and open load detection.
Vcc(op)
Rds(on)
Ilim
Tj(sd)
Eav
5v-50v
150m
5A
170oC
100mJ
Applications
Solenoid Driver
Programmable Logic Controller
Truth Table
Condition
In Out
Dg
Normal
HH
H
Normal
LL
L
Output Open
HH
H
Output Open L H
H
Shorted Output H Current-Limiting L
PWM Mode
Shorted Output L
L
L
Over-Temperature H
L
L
Over-Temperature L
L
L
Block Diagram
Available Packages
Vcc
SO8 Package
GND
OUT

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