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PDF KM68257E Data sheet ( Hoja de datos )

Número de pieza KM68257E
Descripción 32Kx8 Bit High-Speed CMOS Static RAM
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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No Preview Available ! KM68257E Hoja de datos, Descripción, Manual

KM68257E, KM68257EI
PRELIMINARY
CMOS SRAM
Document Title
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev.No. History
Rev. 0.0 Initial Draft
Draft Data
Aug. 1. 1998
Remark
Preliminary
www.DataSheet4U.com
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 0.0
August 1998

1 page




KM68257E pdf
KM68257E, KM68257EI
WRITE CYCLE
Parameter
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
www.DataSheet4U.coWmrite to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Symbol
tWC
tCW
tAS
tAW
tWP
tWP1
tWR
tWHZ
tDW
tDH
tOW
KM68257E-10
Min Max
10 -
8-
0-
8-
8-
10 -
0-
05
5-
0-
0-
NOTE : The above parameters are also guaranteed at industrial temperature range.
PRELIMINARY
CMOS SRAM
KM68257E-12
Min Max
12 -
9-
0-
9-
9-
12 -
0-
06
6-
0-
0-
KM68257E-15
Min Max
15 -
10 -
0-
10 -
10 -
15 -
0-
07
7-
0-
0-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
Address
Data Out
tOH
Previous Valid Data
tAA
tRC
Valid Data
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Address
CS
OE
Data out
VCC
Current
ICC
ISB
tAA
tCO
tOE
tOLZ
tLZ(4,5)
tPU
50%
tRC
tHZ(3,4,5)
tOHZ
Valid Data
tOH
tPD
50%
-5-
Revision 0.0
August 1998

5 Page










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