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PDF 9NQ20T Data sheet ( Hoja de datos )
| Número de pieza | 9NQ20T | |
| Descripción | PHF9NQ20T | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX9NQ20T , PHF9NQ20T
FEATURES
SYMBOL
QUICK REFERENCE DATA
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
d
g
VDSS = 200 V
ID = 5.2 A
RDS(ON) ≤ 400 mΩ
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s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN DESCRIPTION
1 gate
case
case
2 drain
3 source
case isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
5.2
3.3
21
25
150
UNIT
V
V
V
A
A
A
W
˚C
November 2000
1
Rev 1.100
1 page  
Philips Semiconductors
N-channel TrenchMOS transistor
Product specification
PHX9NQ20T , PHF9NQ20T
10 Drain current, ID (A)
9
8
7
6
5
4
3
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2
150 C
1
0
01234
Gate-source voltage, VGS (V)
Tj = 25 C
56
Fig.7. Typical transfer characteristics.
ID = f(VGS)
Transconductance, gfs (S)
14
13
12
11
10
9 Tj = 25 C
8
7
6
5
4
3
2
1
0
012345
ID / (A)
150 C
678
9 10
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
2.5 Normalised On-state Resistance
2
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160
Junction Temperature, Tj C
Fig.9. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
4.5 Threshold Voltage, VGS(TO) (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Drain current, ID (A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C
5
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
Ciss
Coss
100
10
0.1
1 10
Drain-Source Voltage, VDS (V)
Crss
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
November 2000
5
Rev 1.100
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 9NQ20T.PDF ] | |
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