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PDF IRFU9022 Data sheet ( Hoja de datos )
| Número de pieza | IRFU9022 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRFU9022 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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IRFR9022, IRFU9022, SiHFR9022, SiHFU9022
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 50
VGS = - 10 V
14
6.5
6.5
Single
0.33
www.DataSheet4U.com
S
DPAK
(TO-252)
IPAK
(TO-251)
G
D
P-Channel MOSFET
FEATURES
• Surface Mountable (Order as IRFR9022/SiHFR9022)
• Straight Lead Option (Order as IRFU9022/SiHFU9022) Available
• Repetitive Avalanche Ratings
RoHS*
• Dynamic dV/dt Rating
COMPLIANT
• Simple Drive Requirements
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9022/SiHFR9022 is provided on 16mm tape. The
straight lead option IRFR9022/SiHFR9022 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR9022PbF
SiHFR9022-E3
SnPb
Note
a. See device orientation.
IRFR9022
SiHFR9022
DPAK (TO-252)
IRFR9022TRPbFa
SiHFR9022T-E3a
IRFR9022TRa
SiHFR9022Ta
DPAK (TO-252)
IRFR9022TRLPbFa
SiHFR9022TL-E3a
IRFR9022TRLa
SiHFR9022TLa
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
* Pb containing terminations are not RoHS compliant, exemptions may apply
IPAK (TO-251)
IRFU9022PbF
SiHFU9022-E3
IRFU9022
SiHFU9022
LIMIT
- 50
± 20
- 9.0
- 5.7
- 36
0.33
440
- 9.9
4.2
UNIT
V
A
W/°C
mJ
A
mJ
Document Number: 91349
S-Pending-Rev. A, 10-Jun-08
WORK-IN-PROGRESS
www.vishay.com
1
1 page  
IRFR9022, IRFU9022, SiHFR9022, SiHFU9022
Vishay Siliconix
www.DataSheet4U.com
Fig. 9 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 10 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 12 - Maximum Drain Current vs. Case Temperature
Document Number: 91349
S-Pending-Rev. A, 10-Jun-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFU9022.PDF ] | |
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