PDF IRFU220 Data sheet ( Hoja de datos )

Número de pieza	IRFU220
Descripción	Power MOSFET ( Transistor )
Fabricantes	Vishay Siliconix
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No Preview Available ! IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 14 3.0 7.9 Single www.DataSheet4U.com D 0.80 DPAK (TO-252) IPAK (TO-251) G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR220/SiHFR220) • Straight Lead (IRFU220/SiHFU220) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications. ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free IRFR220PbF SiHFR220-E3 SnPb IRFR220 SiHFR220 Note a. See device orientation. DPAK (TO-252) IRFR220TRLPbFa SiHFR220TL-E3a IRFR220TRLa SiHFR220TLa DPAK (TO-252) IRFR220TRPbFa SiHFR220T-E3a IRFR220TRa SiHFR220Ta DPAK (TO-252) IRFR220TRRPbFa SiHFR220TR-E3a IRFR220TRRa SiHFR220TRa IPAK (TO-251) IRFU220PbF SiHFU220-E3 IRFU220 SiHFU220 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). c. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 4.8 A (see fig. 12). d. ISD ≤ 5.2 A, dI/dt ≤ 95 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. e. 1.6 mm from case. f. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply LIMIT 200 ± 20 4.8 3.0 19 0.33 0.020 230 4.8 4.2 42 2.5 5.0 - 55 to + 150 260d UNIT V A W/°C mJ A mJ W V/ns °C Document Number: 91270 S-81359-Rev. A, 07-Jul-08 www.vishay.com 1 1 page IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix www.DataSheet4U.com Fig. 9 - Maximum Drain Current vs. Case Temperature VDS VGS RG RD D.U.T. 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % +- VDD Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91270 S-81359-Rev. A, 07-Jul-08 www.vishay.com 5 5 Page

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