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PDF C3704 Data sheet ( Hoja de datos )
| Número de pieza | C3704 | |
| Descripción | NPN Transistor - 2SC3704 | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Transistors
2SC3704
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High forward transfer gain S21e2
• High transition frequency fT
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
www.DataSheept4aUck.cinogm
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
15
10
2
80
200
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 2W
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0
Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0
Forward current transfer ratio
hFE1 VCE = 8 V, IC = 20 mA
hFE2 VCE = 1 V, IC = 3 mA
Transition frequency
fT VCE = 8 V, IC = 20 mA, f = 0.8 GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
1 µA
1 µA
50 150 300
80 280
6 GHz
0.7 1.2
pF
Forward transfer gain
Maximum unilateral power gain
Noise figure
S21e2
GUM
NF
VCE = 8 V, IC = 20 mA, f = 0.8 GHz
VCE = 8 V, IC = 20 mA, f = 0.8 GHz
VCE = 8 V, IC = 7 mA, f = 0.8 GHz
13
14
1.0 1.7
dB
dB
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJC00134BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C3704.PDF ] | |
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