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PDF ZXTN25012EZ Data sheet ( Hoja de datos )
| Número de pieza | ZXTN25012EZ | |
| Descripción | 12V NPN high gain transistor | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXTN25012EZ
12V NPN high gain transistor in SOT89
Summary
BVCEO > 12V
www.DataSheet4U.cBoVmECX > 6V
hFE > 500
IC(cont) = 6.5A
VCE(sat) < 38mV @ 1A
RCE(sat) = 25m⍀
PD = 2.4W
Complementary part number ZXTP25012EZ
Description
Packaged in the SOT89 outline this new ultra high gain, low saturation
12V NPN transistor offers extremely low on state losses making it ideal
for use in DC-DC circuits and various driving and power management
functions
B
C
Features
• 6.5A continuous current
• Up to 15A peak current
• Very low saturation voltages
• 6V reverse blocking voltage
Applications
• LED driving
• Motor driving
• Boost converters
• Royer converters
• Camera strobe
• MOSFET gate drivers
E
E
CC
B
Pinout - top view
Ordering information
Device
ZXTN25012EZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
Device marking
1K7
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
1 page  
ZXTN25012EZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
www.DataSheet4U.c(ormeverse blocking)
Symbol
BVCBO
BVCEO
BVECX
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
BVECO
BVEBO
ICBO
Collector-Emitter cut-off ICEX
current
Emitter cut-off current
Collector-Emitter
saturation voltage
IEBO
VCE(sat)
Min.
20
12
6
4.5
7
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
Transition frequency
VBE(sat)
VBE(on)
hFE
fT
500
500
185
30
Typ.
40
17
8
5.5
8.3
<1
<1
31
50
70
90
200
950
840
800
750
250
50
260
Max.
50
0.5
100
50
38
60
85
130
270
1050
950
1500
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
Cibo
Cobo
td
tr
ts
tf
137 250
25 35
71
70
233
72
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
Unit Conditions
V IC = 100μA
V IC = 10mA (*)
V IE = 100mA, RBC < 1kΩ
or
0.25V > VBC > -0.25V
V IE = 100μA
V IE = 100μA
nA VCB = 20V
μA VCB = 20V, Tamb= 100°C
nA VCE = 20V, RBE < 1kΩ or
-1V < VBE < 0.25V
nA VEB = 5.6V
mV IC = 1A, IB = 100mA(*)
mV IC = 1A, IB = 10mA(*)
mV IC = 2A, IB = 40mA(*)
mV IC = 2A, IB = 20mA(*)
mV IC = 6.5A, IB = 130mA(*)
mV IC = 6.5A, IB = 130mA(*)
mV IC = 6.5A, VCE = 2V(*)
MHz
pF
pF
ns
ns
ns
ns
IC = 10mA, VCE = 2V(*)
IC = 1A, VCE = 2V(*)
IC = 6.5A, VCE = 2V(*)
IC = 15A, VCE = 2V(*)
IC = 50mA, VCE = 10V
f = 100MHz
VEB = 0.5V, f = 1MHz(*)
VCB = 10V, f = 1MHz(*)
IC = 1A, VCC = 10V,
IB1 =-IB2 = 10mA
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ZXTN25012EZ.PDF ] | |
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