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PDF KMM466S823CT3 Data sheet ( Hoja de datos )
| Número de pieza | KMM466S823CT3 | |
| Descripción | 144pin SDRAM SODIMM | |
| Fabricantes | Samsung Semiconductor | |
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KMM466S823CT3
Revision History
Revision 2 (August 1998)
1. Correct DQ No. in Fuctional Block Diagram.
Change DQ8 ~ DQ15 to DQ0 ~ DQ7.
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Preliminary
144pin SDRAM SODIMM
REV. 2 August 1998
1 page  
KMM466S823CT3
Preliminary
144pin SDRAM SODIMM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
www.DataSheet4U.comShort circuit current
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
8
50
Unit
V
V
°C
W
mA
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Supply voltage
VDD 3.0 3.3 3.6
Input high voltage
Input low voltage
VIH 2.0 3.0 VDDQ+0.3
VIL -0.3
0
0.8
Output high voltage
VOH
2.4
-
-
Output low voltage
VOL -
- 0.4
Input leakage current (Inputs)
IIL
-8
-
8
Input leakage current (I/O pins)
IIL
-1.5
-
1.5
Unit
V
V
V
V
V
uA
uA
Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
Note
1
2
IOH = -2mA
IOL = 2mA
3
3,4
CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200 mV)
Parameter
Symbol
Min
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
COUT
40
40
35
25
35
5
5
Max
60
60
55
35
55
15
15
Unit
pF
pF
pF
pF
pF
pF
pF
REV. 2 August 1998
5 Page 
KMM466S823CT3
PACKAGE DIMENSIONS
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0.16 ± 0.039
(4.00 ± 0.10)
2.66
(67.60)
2.50
(63.60)
Preliminary
144pin SDRAM SODIMM
Units : Inches (Millimeters)
2-R 0.078 Min
(2.00 Min)
0.13
(3.30)
0.15
(3.70)
0.91
(23.20)
0.10
(2.50)
0.18
(4.60)
0.083
(2.10)
1.29
(32.80)
Z
2-φ 0.07
(1.80)
Y
0.150 Max
(3.81 Max)
0.04 ± 0.0039
(1.00 ± 0.10)
0.16 ± 0.0039
(4.00 ± 0.10)
0.06 ± 0.0039
(1.50 ± 0.1)
Detail Z
Tolerances : ±.005(.13) unless otherwise specified
The used device is 8Mx8 SDRAM, TSOP
SDRAM Part No. : KM48S8030CT
0.024 ± 0.001
(0.60 ± 0.05)
0.01 Max
(0.25 Max)
0.03 TYP
(0.80 TYP)
Detail Y
REV. 2 August 1998
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet KMM466S823CT3.PDF ] | |
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