PDF KMM466F404BS2-L Data sheet ( Hoja de datos )

Número de pieza	KMM466F404BS2-L
Descripción	4M X 64 DRAM SODIMM
Fabricantes	Samsung Semiconductor
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No Preview Available ! DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM466F404BS2-L consists of four CMOS 4Mx16bits www.DataSheeDt4RUA.cMoms in TSOP 400mil packages and a 2K EEPROM in 8- pin TSSOP package mounted on a 144-pin glass-epoxy sub- strate. A 0.1uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM466F404BS2-L is a Small Out-line Dual in-line Memory Module and is intended for mounting into 144 pin edge connector sockets. PERFORMANCE RANGE Speed tRAC tCAC -5 50ns 13ns -6 60ns 15ns tRC 84ns 104ns tHPC 20ns 25ns FEATURES • Part Identification - KMM466F404BS2-L(4096 cycles/128ms, TSOP, L-ver) • Extended Data Out Mode Operation • New JEDEC standard proposal with EEPROM • Serial Presense Detect with EEPROM • CAS-before-RAS Refresh capability • Self -refresh capability • RAS-only and Hidden refresh capability • LVTTL compatible inputs and outputs • Single +3.3V±0.3V power supply • PCB : Height(1000mil), double sided component PIN CONFIGURATIONS Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back 1 VSS 2 VSS 49 DQ13 50 DQ45 97 DQ22 98 DQ54 3 DQ0 4 DQ32 51 DQ14 52 DQ46 99 DQ23 100 DQ55 5 DQ1 6 DQ33 53 DQ15 54 DQ47 101 VCC 102 VCC 7 DQ2 8 DQ34 55 VSS 56 VSS 103 A6 104 A7 9 DQ3 10 DQ35 57 RSVD 58 RSVD 105 A8 106 A11 11 VCC 12 VCC 59 RSVD 60 RSVD 107 VSS 108 VSS 13 DQ4 14 DQ36 61 RFU 62 RFU 109 A9 110 NC 15 DQ5 16 DQ37 63 VCC 64 VCC 111 A10 112 NC 17 DQ6 18 DQ38 65 RFU 66 RFU 113 VCC 114 VCC 19 DQ7 20 DQ39 67 W 68 RFU 115 CAS2 116 CAS6 21 VSS 22 VSS 69 RAS0 70 RFU 117 CAS3 118 CAS7 23 CAS0 24 CAS4 71 NC 72 RFU 119 VSS 120 Vss 25 CAS1 26 CAS5 73 OE 74 RFU 121 DQ24 122 DQ56 27 VCC 28 VCC 75 VSS 76 VSS 123 DQ25 124 DQ57 29 A0 30 A3 77 RSVD 78 RSVD 125 DQ26 126 DQ58 31 A1 32 A4 79 RSVD 80 RSVD 127 DQ27 128 DQ59 33 A2 34 A5 81 VCC 82 VCC 129 VCC 130 VCC 35 VSS 36 VSS 83 DQ16 84 DQ48 131 DQ28 132 DQ60 37 DQ8 38 DQ40 85 DQ17 86 DQ49 133 DQ29 134 DQ61 39 DQ9 40 DQ41 87 DQ18 88 DQ50 135 DQ30 136 DQ62 41 DQ10 42 DQ42 89 DQ19 90 DQ51 137 DQ31 138 DQ63 43 DQ11 44 DQ43 91 VSS 92 VSS 139 VSS 140 Vss 45 VCC 46 VCC 93 DQ20 94 DQ52 141 SDA 142 SCL 47 DQ12 48 DQ44 95 DQ21 96 DQ53 143 VCC 144 VCC PIN NAMES Pin Name Function A0 to A11 Address Inputs DQ0 - DQ63 Data In/Out W Read/Write Enable OE Output Enable RAS0 Row Address Strobe CAS0 - CAS7 Column Address Strobe VCC Power(+3.3V) VSS Ground NC No Connection SDA Serial Address / Data I/O SCL Serial Clock RSVD Reserved Use RFU Reserved for Future Use 1 page DRAM MODULE KMM466F404BS2-L AC CHARACTERISTICS (0°C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.) Test condition : Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V, output loading CL=100pF Parameter Symbol -5 Min Max Column address to W delay time CAS precharge to W delay time CAS setup time (CAS-before-RAS refresh) CAS hold time (CAS-before-RAS refresh) www.DataSheet4RUA.cSomto CAS precharge time Access time from CAS precharge Hyper page mode cycle time Hyper page mode read-modify write cycle time CAS precharge time (Hyper page cycle) RAS pulse width (Hyper page cycle) RAS hold time from CAS precharge W to RAS precharge time (C-B-R refresh) W to RAS hold time (C-B-R refresh) OE access time OE to data delay Output buffer turn off delay time from OE OE command hold time Output data hold time Output buffer turn off delay from RAS Output buffer turn off delay from W W to data delay OE to CAS hold time CAS hold time to OE OE precharge time W pulse width(Hyper page cycle) RAS pulse width (C-B-R self refresh) RAS precharge time (C-B-R self refresh) CAS hold time (C-B-R self refresh) tAWD tCPWD tCSR tCHR tRPC tCPA tHPC tHPRWC tCP tRASP tRHCP tWRP tWRH tOEA tOED tOEZ tOEH tDOH tREZ tWEZ tWED tOCH tCHO tOEP tWPE tRASS tRPS tCHS 45 47 5 10 5 28 20 67 7 50 200K 30 10 10 13 10 3 13 5 5 3 13 3 13 15 5 5 5 5 100 90 -50 -6 Min Max 53 58 5 10 5 35 25 73 10 60 200K 35 10 10 15 13 3 13 5 5 3 15 3 15 15 5 5 5 5 100 110 -50 Unit Note ns 6 ns 6 ns 16 ns 17 ns ns 3 ns 10 ns 10 ns 13 ns ns ns ns ns 3 ns ns ns ns ns 11 ns ns ns ns ns ns us 19,20,21 ns 19,20,21 ns 19,20,21 5 Page DRAM MODULE HYPER PAGE READ CYCLE KMM466F404BS2-L www.DataSheet4U.com VIH - RAS VIL - VIH - CAS VIL - VIH - A VIL - tRASP tCRP tCSH tRCD tHPC tCP tCAS ¡ó tHPC tCAS tCP tHPC tCP tCAS tRHCP tCAS tRAD tASR tRAH tASC tCAH tASC tCAH tASC tCAH tASC tCAH ROW ADDR COLUMN ADDRESS COLUMN ADDRESS COLUMN ADDR COLUMN ADDRESS tRP tREZ VIH - W VIL - VIH - OE VIL - VOH - DQ VOL - tRCS tCAC tAA tCPA tAA tCAC tOEA tRAC tCAC tDOH VALID DATA-OUT tOLZ tCLZ VALID DATA-OUT tRCH tRRH tCAC tAA tCPA tOCH tOEA tCPA tCAC tAA tCHO tOEP tOEP tOEZ tOEZ tOEA VALID DATA-OUT tOEZ VALID DATA-OUT Don′t care Undefined 11 Page

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