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PDF KEM5001R Data sheet ( Hoja de datos )
| Número de pieza | KEM5001R | |
| Descripción | Infrared Emitting Diode | |
| Fabricantes | KODENSHI KOREA | |
| Logotipo |  |
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Infrared Emitting Diode(GaAlAs)
KEM5001R
The KEM5001R is GaAlAs infrared emitting diode
that is designed for high power, low forward voltage.
This device is optimized for speed and efficiency
at emission wavelength 870nm and has a high radiant
efficiency over a wide range of forward current.
www.DataSheet4U.com
Features
870nm wavelength
Low forward voltage
High power and high reliability
Available for pulse operating
Surface Mountable Leadless Package
Dimensions
0.085
2.60
Applications
IR Audio and Telephone
IR Communication
Optical Switch
Available for Wireless Digital Data Transmission
[Unit : mm]
0.45
0.80
3.70±0.1
* PIN Description
ANODE
CATHODE
Absolute Maximum Ratings
Parameter
Symbol
Power Dissipation
PD
Forward Current
IF
Pulse Forward Current *1
IFP
Reverse Voltage
VR
Operating Temperature
Topr.
Storage Temperature
Tstg.
Soldering Temperature*2
Tsol
*1. Duty ratio=1/100, pulse width=0.1ms
*2. MAX 5sec
[TA = 25 ]
Rating Unit
95 mW
50 mA
1A
5V
-25~+85
-25~+100
260
Electro-Optical Characteristics
Parameter
Forward Voltage
Reverse Voltage
Radiant intensity
Peak Emission Wavelength
Spectral Bandwidth 50%
Half Angle
Rise Time
Symbol
VF
VR
PO
p
Θ1/2
Tr
Conditions
IF=50㎃
IR=10uA
IF=50㎃
IF=20㎃
IF=20㎃
IF=30mA
IF=50mA
Min.
-
4
13
-
-
-
-
Typ.
1.6
-
16
870
45
±20
15
Max.
1.9
-
-
-
-
-
-
[TA = 25
Unit.
V
V
㎽/sr
nm
nm
deg.
ns
]
-1-
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KEM5001R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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