|
|
Número de pieza | IRF7210 | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF7210 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! PD- 91844A
IRF7210
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
www.DataSheet4U.com
S
S
S
G
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques.
HEXFET® Power MOSFET
A
1 8D
2
7D
VDSS = -12V
3 6D
4 5 D RDS(on) = 0.007Ω
T op V ie w
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
-12
±16
±12
±100
2.5
1.6
0.02
± 12
16
-55 to + 150
Max.
50
Units
V
A
W
W/°C
V
V
°C
Units
°C/W
1
7/30/99
1 page IRF7210
100
www.DataSheet4U.com
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
0.1
0.001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1 1 10
t1, Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
www.irf.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRF7210.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF721 | N-Channel Mosfet Transistor | Inchange Semiconductor |
IRF721 | TRANSISTORS N-CHANNEL | International Rectifier |
IRF721 | N-Channel Power MOSFETs/ 3.0 A/ 350-400 V | Fairchild Semiconductor |
IRF721 | N-CHANNEL POWER MOSFETS | Samsung semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |